R4F24568NVRFQV Renesas Electronics America, R4F24568NVRFQV Datasheet - Page 268

• Manufacturer Part Number: R4F24568NVRFQV
• Description: MCU 256KB FLASH 48K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24568NVRFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 32MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2456, H8S/2456R, H8S/2454 Group
Section 6 Bus Controller (BSC)
6.7.11
Burst Operation
With DRAM, in addition to full access (normal access) in which data is accessed by outputting a
row address for each access, a fast page mode is also provided which can be used when making
consecutive accesses to the same row address. This mode enables fast (burst) access of data by
simply changing the column address after the row address has been output. Burst access can be
selected by setting the BE bit to 1 in DRAMCR.
(1)
Burst Access (Fast Page Mode)
Figures 6.42 and 6.43 show the operation timing for burst access. When there are consecutive
access cycles for DRAM space, the CAS signal and column address output cycles (two states)
continue as long as the row address is the same for consecutive access cycles. The row address
used for the comparison is set with bits MXC2 to MXC0 in DRAMCR.
Page 238 of 1392
REJ09B0467-0350 Rev. 3.50
Jul 07, 2010