D12332VFC20V Renesas Electronics America, D12332VFC20V Datasheet - Page 943

• Manufacturer Part Number: D12332VFC20V
• Description: IC H8S/2332 MCU ROMLESS 144QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12332VFC20V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 106
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Notes: 1. Follow the program/erase algorithms when making the time settings.
22.3
Although both the F-ZTAT and mask ROM versions fully meet the electrical specifications listed
in this manual, there may be differences in the actual values of the electrical characteristics,
operating margins, noise margins, and so forth, due to differences in the fabrication process, the
on-chip ROM, and the layout patterns.
If the F-ZTAT version is used to carry out system evaluation and testing, therefore, when
switching to the mask ROM version the same evaluation and testing procedures should also be
conducted on this version.
2. Programming time per 128 bytes. (Indicates the total time during which the P bit is set
3. Time to erase one block. (Indicates the time during which the E bit is set in FLMCR1.
4. Maximum programming time
5. The maximum number of writes (N) should be set as shown below according to the
6. For the maximum erase time (t
7. Minimum number of times for which all characteristics are guaranteed after rewriting
8. Reference value for 25°C (as a guideline, rewriting should normally function up to this
9. Data retention characteristic when rewriting is performed within the specification range,
Usage Note
The wait time after P bit setting (z) should be changed as follows according to the
Number of writes (n)
in flash memory control register 1 (FLMCR1). Does not include the program-verify
time.)
Does not include the erase-verify time.)
actual set value of z so as not to exceed the maximum programming time (t
number of writes (n).
wait time after E bit setting (z) and the maximum number of erases (N):
(Guarantee range is 1 to minimum value).
value).
including the minimum value.
t
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
1 ≤ n ≤ 6
t
P
E
(max) =
(max) = Wait time after E bit setting (z) × maximum number of erases (N)
i=1
Σ
N
wait time after P bit setting (z)
z = 30 µs
z = 200 µs
z = 10 µs: For additional writing
E
(max)), the following relationship applies between the
Rev.4.00 Sep. 07, 2007 Page 911 of 1210
REJ09B0245-0400
P
(max)).