MC9S08SH16MTG Freescale Semiconductor, MC9S08SH16MTG Datasheet - Page 313

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MC9S08SH16MTG

Manufacturer Part Number
MC9S08SH16MTG
Description
MCU 8BIT 16K FLASH 16-TSSOP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet

Specifications of MC9S08SH16MTG

Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
13
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
16-TSSOP
Core
S08
Processor Series
MC9S08Sxx
Data Bus Width
8 bit
Maximum Clock Frequency
40 MHz
Data Ram Size
1 KB
On-chip Adc
Yes
Number Of Timers
3
Operating Supply Voltage
2.7 V to 5.5 V
Operating Temperature Range
- 40 C to + 125 C
Mounting Style
SMD/SMT
A/d Bit Size
10 bit
A/d Channels Available
8
Height
1.05 mm
Interface Type
SCI, SPI, I2C
Length
5 mm
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.7 V
Width
4.4 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
1
A.14 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
A.14.1
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (North and East).
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal
to the reported emissions levels.
A.14.2
Microcontroller transient conducted susceptibility is measured in accordance with an internal Freescale
test method. The measurement is performed with the microcontroller installed on a custom EMC
evaluation board and running specialized EMC test software designed in compliance with the test method.
The conducted susceptibility is determined by injecting the transient susceptibility signal on each pin of
the microcontroller. The transient waveform and injection methodology is based on IEC 61000-4-4
(EFT/B). The transient voltage required to cause performance degradation on any pin in the tested
configuration is greater than or equal to the reported levels unless otherwise indicated by footnotes below
Table
Freescale Semiconductor
Radiated emissions,
electric field
Data based on qualification test results.
A-18.
Parameter
Radiated Emissions
Conducted Transient Susceptibility
V
Symbol
Table A-17. Radiated Emissions, Electric Field
RE_TEM
MC9S08SH32 Series Data Sheet, Rev. 2
package type
Conditions
V
T
A
DD
= +25
TBD
=
PRELIMINARY
TBD
o
C
500 – 1000 MHz
150 – 500 MHz
0.15 – 50 MHz
50 – 150 MHz
Frequency
SAE Level
IEC Level
TBD
f
TBD
OSC
Appendix A Electrical Characteristics
crystal
/f
bus
BUS
Level
(Max)
TBD
TBD
TBD
TBD
TBD
TBD
1
dBμV
Unit
313

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