ATTINY44-15MZ Atmel, ATTINY44-15MZ Datasheet - Page 174

• Manufacturer Part Number: ATTINY44-15MZ
• Description: MCU AVR 4K FLASH 15MHZ 20-QFN
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY44-15MZ

• Package / Case: 20-QFN Exposed Pad
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Speed: 16MHz
• Number Of I /o: 12
• Eeprom Size: 256 x 8
• Core Processor: AVR
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Program Memory Size: 4KB (4K x 8)
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Connectivity: USI
• Core Size: 8-Bit
• Processor Series: ATTINY4x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: SPI, UART
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 12
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 21-5. High-voltage Serial Programming Waveforms
21.8.5
21.8.6
21.8.7
21.8.8
21.8.9
21.8.10
174
SDO
PB0
PB1
PB2
PB3
SDI
SCI
SII
Atmel ATtiny24/44/84 [Preliminary]
Programming the EEPROM
Reading the Flash
Reading the EEPROM
Programming and Reading the Fuse and Lock Bits
Reading the Signature Bytes and Calibration Byte
Power-off sequence
0
MSB
MSB
MSB
1
The EEPROM is organized in pages, see
EEPROM, the data are latched into a page buffer. This allows one page of data to be pro-
grammed simultaneously. The programming algorithm for the EEPROM data memory is as
follows (refer to
The algorithm for reading the Flash memory is as follows (refer to
The algorithm for reading the EEPROM memory is as follows (refer to
175):
The algorithms for programming and reading the Fuse Low/High bits and Lock bits are shown
in
The algorithms for reading the Signature bytes and Calibration byte are shown in
on page
Set SCI to “0”. Set RESET to “1”. Turn V
1. Load "Write EEPROM" command.
2. Load EEPROM page buffer.
3. Program EEPROM page. Wait after Instr. 2 until SDO goes high for the page pro-
4. Repeat 2 and 3 until the entire EEPROM is programmed, or until all data has been
5. End page programming by loading "No Operation" command.
1. Load "Read Flash" command.
2. Read Flash Low and High Bytes. The contents at the selected address are available
1. Load "Read EEPROM" command.
2. Read EEPROM byte. The contents at the selected address are available at serial out-
Table 21-15 on page
2
gramming cycle to finish.
programmed.
at serial output SDO.
put SDO.
175.
3
Table 21-15 on page
4
175.
5
175):
6
CC
Table 22-8 on page
power off.
7
LSB
LSB
LSB
8
185. When programming the
9
Table 21-15 on page
10
Table 21-15 on page
7701E–AVR–02/11
Table 21-15
175):