ATTINY44-15MZ Atmel, ATTINY44-15MZ Datasheet - Page 174
ATTINY44-15MZ
Manufacturer Part Number
ATTINY44-15MZ
Description
MCU AVR 4K FLASH 15MHZ 20-QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheet
1.ATTINY44-15MZ.pdf
(225 pages)
Specifications of ATTINY44-15MZ
Package / Case
20-QFN Exposed Pad
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Speed
16MHz
Number Of I /o
12
Eeprom Size
256 x 8
Core Processor
AVR
Program Memory Type
FLASH
Ram Size
256 x 8
Program Memory Size
4KB (4K x 8)
Data Converters
A/D 8x10b
Oscillator Type
Internal
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Connectivity
USI
Core Size
8-Bit
Processor Series
ATTINY4x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
SPI, UART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
12
Number Of Timers
2
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATTINY44-15MZ
Manufacturer:
ATMEL
Quantity:
1 000
Part Number:
ATTINY44-15MZ
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
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Figure 21-5. High-voltage Serial Programming Waveforms
21.8.5
21.8.6
21.8.7
21.8.8
21.8.9
21.8.10
174
SDO
PB0
PB1
PB2
PB3
SDI
SCI
SII
Atmel ATtiny24/44/84 [Preliminary]
Programming the EEPROM
Reading the Flash
Reading the EEPROM
Programming and Reading the Fuse and Lock Bits
Reading the Signature Bytes and Calibration Byte
Power-off sequence
0
MSB
MSB
MSB
1
The EEPROM is organized in pages, see
EEPROM, the data are latched into a page buffer. This allows one page of data to be pro-
grammed simultaneously. The programming algorithm for the EEPROM data memory is as
follows (refer to
The algorithm for reading the Flash memory is as follows (refer to
The algorithm for reading the EEPROM memory is as follows (refer to
175):
The algorithms for programming and reading the Fuse Low/High bits and Lock bits are shown
in
The algorithms for reading the Signature bytes and Calibration byte are shown in
on page
Set SCI to “0”. Set RESET to “1”. Turn V
1. Load "Write EEPROM" command.
2. Load EEPROM page buffer.
3. Program EEPROM page. Wait after Instr. 2 until SDO goes high for the page pro-
4. Repeat 2 and 3 until the entire EEPROM is programmed, or until all data has been
5. End page programming by loading "No Operation" command.
1. Load "Read Flash" command.
2. Read Flash Low and High Bytes. The contents at the selected address are available
1. Load "Read EEPROM" command.
2. Read EEPROM byte. The contents at the selected address are available at serial out-
Table 21-15 on page
2
gramming cycle to finish.
programmed.
at serial output SDO.
put SDO.
175.
3
Table 21-15 on page
4
175.
5
175):
6
CC
Table 22-8 on page
power off.
7
LSB
LSB
LSB
8
185. When programming the
9
Table 21-15 on page
10
Table 21-15 on page
7701E–AVR–02/11
Table 21-15
175):
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