ATTINY44-15MZ Atmel, ATTINY44-15MZ Datasheet - Page 172

• Manufacturer Part Number: ATTINY44-15MZ
• Description: MCU AVR 4K FLASH 15MHZ 20-QFN
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY44-15MZ

• Package / Case: 20-QFN Exposed Pad
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Speed: 16MHz
• Number Of I /o: 12
• Eeprom Size: 256 x 8
• Core Processor: AVR
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Program Memory Size: 4KB (4K x 8)
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Connectivity: USI
• Core Size: 8-Bit
• Processor Series: ATTINY4x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: SPI, UART
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 12
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

21.8
21.8.1
21.8.2
172
High-voltage Serial Programming Algorithm
Atmel ATtiny24/44/84 [Preliminary]
Enter High-voltage Serial Programming Mode
Considerations for Efficient Programming
To program and verify the Atmel
ming mode, the following sequence is recommended (see instruction formats in
on page
The following algorithm puts the device in High-voltage Serial Programming mode:
1. Apply 4.5 - 5.5V between V
2. Set RESET pin to “0” and toggle SCI at least six times.
3. Set the Prog_enable pins listed in
4. Apply V
5. Shortly after latching the Prog_enable signature, the device will actively output data on
6. Wait at least 50 µs before giving any serial instructions on SDI/SII.
Table 21-14. High-voltage Reset Characteristics
The loaded command and address are retained in the device during programming. For effi-
cient programming, the following should be considered.
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF that is the contents of the entire EEPROM (unless the
• Address high byte only needs be loaded before programming or reading a new 256-word
Supply Voltage
V
4.5V
5.5V
locations.
EESAVE fuse is programmed) and flash after a chip erase.
window in flash or 256-byte EEPROM. This consideration also applies to reading signature
bytes.
CC
100 ns.
t
has been latched.
the Prog_enable[2]/SDO pin, and the resulting drive contention may increase the
power consumption. To minimize this drive contention, release the Prog_enable[2] pin
after t
HVRST
175):
HVRST
after the High-voltage has been applied to ensure the Prog_enable signature
HVRST
has elapsed.
- 5.5V to RESET. Keep the Prog_enable pins unchanged for at least
RESET Pin High-voltage Threshold
CC
®
and GND.
V
AVR
11.5V
11.5V
HVRST
Table 21-13 on page 171
®
ATtiny24/44/84 in the high-voltage serial program-
Minimum High-voltage Period for
to “000” and wait at least
Latching Prog_enable
t
100ns
100ns
HVRST
7701E–AVR–02/11
Table 21-15