DF2145BVTE10V Renesas Electronics America, DF2145BVTE10V Datasheet - Page 67

IC H8S MCU FLASH 256K 100TQFP

DF2145BVTE10V

Manufacturer Part Number
DF2145BVTE10V
Description
IC H8S MCU FLASH 256K 100TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of DF2145BVTE10V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
10MHz
Connectivity
Host Interface (LPC), I²C, IrDA, SCI, X-Bus
Peripherals
PWM, WDT
Number Of I /o
74
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP
For Use With
3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2145BVTE10V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2145BVTE10V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
2.2.2
ADDS (ADD with Sign extension)
Operation
Rd + 1
Rd + 2
Rd + 4
Assembly-Language Format
ADDS #1, ERd
ADDS #2, ERd
ADDS #4, ERd
Operand Size
Longword
Description
This instruction adds the immediate value 1, 2, or 4 to the contents of a 32-bit register ERd
(destination operand). Unlike the ADD instruction, it does not affect the condition code flags.
Available Registers
ERd: ER0 to ER7
Operand Format and Number of States Required for Execution
Notes
Register direct
Register direct
Register direct
Addressing
Mode
ADDS
ERd
ERd
ERd
Mnemonic
ADDS
ADDS
ADDS
Operands
#1, ERd
#2, ERd
#4, ERd
1st byte
0
0
0
B
B
B
Condition Code
H: Previous value remains unchanged.
N: Previous value remains unchanged.
Z: Previous value remains unchanged.
V: Previous value remains unchanged.
C: Previous value remains unchanged.
2nd byte
0
8
9
Instruction Format
I
Rev. 4.00 Feb 24, 2006 page 51 of 322
0 erd
0 erd
0 erd
UI H
Section 2 Instruction Descriptions
3rd byte
Add Binary Address Data
U
N
4th byte
REJ09B0139-0400
Z
— —
V
States
No. of
C
1
1
1

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