DF2145BVTE10V Renesas Electronics America, DF2145BVTE10V Datasheet - Page 307

• Manufacturer Part Number: DF2145BVTE10V
• Description: IC H8S MCU FLASH 256K 100TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2145BVTE10V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, IrDA, SCI, X-Bus
• Peripherals: PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP
• For Use With: 3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2145BVTE10V

Figure 2.1 shows timing waveforms for the address bus and the RD and WR (HWR or LWR)
signals during execution of the above instruction with an 8-bit bus, using three-state access with
no wait states.
Address bus
RD
WR (HWR or
LWR)
Figure 2.1 Address Bus, RD
of instruction
Fetching
3rd byte
(8-Bit Bus, Three-State Access, No Wait States)
R:W 2nd
of instruction
Fetching
4th byte
High level
RD
RD, and WR
RD
operation
Internal
WR
WR
WR (HWR
Rev. 4.00 Feb 24, 2006 page 291 of 322
HWR
HWR or LWR
HWR
jump address
instruction at
1st byte of
Fetching
Section 2 Instruction Descriptions
LWR
LWR) Timing
LWR
R:W EA
jump address
instruction at
2nd byte of
Fetching
REJ09B0139-0400