DF2145BVTE10V Renesas Electronics America, DF2145BVTE10V Datasheet - Page 136

IC H8S MCU FLASH 256K 100TQFP

DF2145BVTE10V

Manufacturer Part Number
DF2145BVTE10V
Description
IC H8S MCU FLASH 256K 100TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of DF2145BVTE10V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
10MHz
Connectivity
Host Interface (LPC), I²C, IrDA, SCI, X-Bus
Peripherals
PWM, WDT
Number Of I /o
74
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP
For Use With
3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2145BVTE10V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2145BVTE10V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 2 Instruction Descriptions
2.2.34
JSR (Jump to SubRoutine)
Operation
PC
Effective address
Assembly-Language Format
JSR <EA>
Operand Size
Description
This instruction pushes the program counter onto the stack as a return address, then branches to a
specified effective address. The program counter value pushed onto the stack is the address of the
instruction following the JSR instruction.
Available Registers
ERn: ER0 to ER7
Operand Format and Number of States Required for Execution
Rev. 4.00 Feb 24, 2006 page 120 of 322
REJ09B0139-0400
Register indirect
Absolute address
Memory indirect
Addressing
Mode
@–SP
JSR
Mnemonic
JSR
JSR
JSR
PC
Operands
@@aa:8
@aa:24
@ERn
1st byte
5
5
5
D
E
F
0 ern
2nd byte
Instruction Format
abs
Condition Code
H: Previous value remains unchanged.
N: Previous value remains unchanged.
Z: Previous value remains unchanged.
V: Previous value remains unchanged.
C: Previous value remains unchanged.
0
I
3rd byte
abs
UI H
4th byte
U
N
Jump to Subroutine
Normal
Z
3
4
4
No. of States
— —
V
Advanced
C
4
5
6

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