DF2145BVTE10V Renesas Electronics America, DF2145BVTE10V Datasheet - Page 34

• Manufacturer Part Number: DF2145BVTE10V
• Description: IC H8S MCU FLASH 256K 100TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2145BVTE10V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, IrDA, SCI, X-Bus
• Peripherals: PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP
• For Use With: 3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2145BVTE10V

Section 1 CPU
1.5.2
Figure 1.11 shows the data formats in memory. The CPU can access word data and longword data
in memory, but word or longword data must begin at an even address. If an attempt is made to
access word or longword data at an odd address, no address error occurs but the least significant
bit of the address is regarded as 0, so the access starts at the preceding address. This also applies to
instruction fetches.
When the stack pointer (ER7) is used as an address register to access the stack, the operand size
should be word size or longword size.
Rev. 4.00 Feb 24, 2006 page 18 of 322
REJ09B0139-0400
Memory Data Formats
Data Type
1-bit data
Byte data
Word data
Longword data
Figure 1.11 Memory Data Formats
Address 2M + 1
Address 2N + 1
Address 2N + 2
Address 2N + 3
Address 2M
Address 2N
Address
Address L
Address L
MSB
MSB
MSB
7
7
6
Data Format
5
4
3
2
1
LSB
LSB
LSB
0
0