DF2145BVTE10V Renesas Electronics America, DF2145BVTE10V Datasheet - Page 306

• Manufacturer Part Number: DF2145BVTE10V
• Description: IC H8S MCU FLASH 256K 100TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2145BVTE10V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, IrDA, SCI, X-Bus
• Peripherals: PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP
• For Use With: 3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2145BVTE10V

Section 2 Instruction Descriptions
2.7
Table 2.6 indicates the types of cycles that occur during instruction execution by the CPU. See
table 2.4 for the number of states per cycle.
How to Read the Table:
Legend
R:B
R:W
W:B
W:W
2nd
3rd
4th
5th
NEXT
EA
VEC
Rev. 4.00 Feb 24, 2006 page 290 of 322
REJ09B0139-0400
JMP @aa:24
Instruction
Bus States During Instruction Execution
Byte-size read
Word-size read
Byte-size write
Word-size write
Address of 2nd word (3rd and 4th bytes)
Address of 3rd word (5th and 6th bytes)
Address of 4th word (7th and 8th bytes)
Address of 5th word (9th and 10th bytes)
Address of next instruction
Effective address
Vector address
R:W 2nd
1
Internal operation,
1 state
2
R:W EA
3
4
Order of execution
End of instruction
Read effective address (word-size read)
No read or write
Read 2nd word of current instruction
(word-size read)
5
6
7
8
9