DF2145BVTE10V Renesas Electronics America, DF2145BVTE10V Datasheet - Page 182

IC H8S MCU FLASH 256K 100TQFP

DF2145BVTE10V

Manufacturer Part Number
DF2145BVTE10V
Description
IC H8S MCU FLASH 256K 100TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of DF2145BVTE10V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
10MHz
Connectivity
Host Interface (LPC), I²C, IrDA, SCI, X-Bus
Peripherals
PWM, WDT
Number Of I /o
74
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP
For Use With
3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2145BVTE10V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2145BVTE10V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 2 Instruction Descriptions
2.2.48 (2)
ORC (inclusive OR Control register)
Operation
EXR
Assembly-Language Format
ORC #xx:8, EXR
Operand Size
Byte
Description
This instruction ORs the contents of the extended control register (EXR) with immediate data and
stores the result in the extended control register. No interrupt requests, including NMI, are
accepted for three states after execution of this instruction.
Operand Format and Number of States Required for Execution
Notes
Rev. 4.00 Feb 24, 2006 page 166 of 322
REJ09B0139-0400
Immediate
Addressing
Mode
#IMM
ORC
EXR
Mnemonic
ORC
#xx:8, EXR
Operands
1st byte
0
1
Condition Code
H: Stores the corresponding bit of the result.
N: Stores the corresponding bit of the result.
Z: Stores the corresponding bit of the result.
V: Stores the corresponding bit of the result.
C: Stores the corresponding bit of the result.
2nd byte
4
Instruction Format
I
1
UI H
3rd byte
0
U
4
Logical OR with EXR
N
4th byte
IMM
Z
— —
V
States
No. of
C
2

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