DF2145BVTE10V Renesas Electronics America, DF2145BVTE10V Datasheet - Page 245

• Manufacturer Part Number: DF2145BVTE10V
• Description: IC H8S MCU FLASH 256K 100TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2145BVTE10V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, IrDA, SCI, X-Bus
• Peripherals: PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP
• For Use With: 3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2145BVTE10V

2.2.63
STM (STore from Multiple registers)
Operation
ERn (register list)
Assembly-Language Format
STM.L <register list>, @–SP
Operand Size
Longword
Description
This instruction saves a group of registers specified by a register list onto the stack. The registers
are saved in ascending order of register number.
Two, three, or four registers can be saved by one STM instruction. The following ranges can be
specified in the register list.
Two registers: ER0–ER1, ER2–ER3, ER4–ER5, or ER6–ER7
Three registers: ER0–ER2 or ER4–ER6
Four registers: ER0–ER3 or ER4–ER7
Available Registers
ERn: ER0 to ER7
STM
@–SP
Condition Code
H: Previous value remains unchanged.
N: Previous value remains unchanged.
Z: Previous value remains unchanged.
V: Previous value remains unchanged.
C: Previous value remains unchanged.
Rev. 4.00 Feb 24, 2006 page 229 of 322
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I
UI H
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Section 2 Instruction Descriptions
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U
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N
Store Data on Stack
REJ09B0139-0400
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Z
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V
C