MC56F8322MFAE Freescale Semiconductor, MC56F8322MFAE Datasheet - Page 110

IC DSP 16BIT 60MHZ 48-LQFP

MC56F8322MFAE

Manufacturer Part Number
MC56F8322MFAE
Description
IC DSP 16BIT 60MHZ 48-LQFP
Manufacturer
Freescale Semiconductor
Series
56F8xxxr
Datasheet

Specifications of MC56F8322MFAE

Core Processor
56800
Core Size
16-Bit
Speed
60MHz
Connectivity
CAN, SCI, SPI
Peripherals
POR, PWM, Temp Sensor, WDT
Number Of I /o
21
Program Memory Size
40KB (20K x 16)
Program Memory Type
FLASH
Ram Size
6K x 16
Voltage - Supply (vcc/vdd)
2.25 V ~ 3.6 V
Data Converters
A/D 6x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
48-LQFP
Cpu Family
56F8xxx
Device Core Size
16b
Frequency (max)
60MHz
Interface Type
CAN/SCI/SPI
Total Internal Ram Size
4KB
# I/os (max)
21
Number Of Timers - General Purpose
2
Operating Supply Voltage (typ)
2.5/3.3V
Operating Supply Voltage (max)
2.75/3.6V
Operating Supply Voltage (min)
2.25/3V
On-chip Adc
2(3-chx12-bit)
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Mounting
Surface Mount
Pin Count
48
Package Type
LQFP
Data Bus Width
16 bit
Processor Series
MC56F83xx
Core
56800E
Numeric And Arithmetic Format
Fixed-Point
Device Million Instructions Per Second
40 MIPs
Maximum Clock Frequency
60 MHz
Number Of Programmable I/os
21
Data Ram Size
4 KB
Operating Supply Voltage
- 0.3 V to + 4 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Data Rom Size
8 KB
Minimum Operating Temperature
- 40 C
For Use With
MC56F8323EVME - BOARD EVALUATION MC56F8323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Compliant

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Manufacturer:
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Figure 10-2
10.4 Flash Memory Characteristics
110
1. There is additional overhead which is part of the programming sequence. See the 56F8300 Peripheral User Manual for details.
2. Specifies page erase time. There are 512 bytes per page in the Data and Boot Flash memories. The Program Flash module
Characteristic
Program time
Erase time
Mass erase time
Program time is per 16-bit word in Flash memory. Two words at a time can be programmed within the Program Flash module,
as it contains two interleaved memories.
uses two interleaved Flash memories, increasing the effective page size to 1024 bytes.
Active state, when a bus or signal is driven, and enters a low impedance state
Tri-stated, when a bus or signal is placed in a high impedance state
Data Valid state, when a signal level has reached V
Data Invalid state, when a signal level is in transition between V
2
Data Invalid State
shows the definitions of the following signal states:
1
Data1 Valid
Data1
Data Active
Table 10-12 Flash Timing Parameters
Symbol
T
T
T
erase
Figure 10-2 Signal States
prog
me
56F8322 Techncial Data, Rev. 16
Data2 Valid
Data2
OL
Min
100
20
20
or V
Tri-stated
OH
Data
OL
and V
Typ
OH
Data3 Valid
Data Active
Data3
Freescale Semiconductor
Max
Preliminary
Unit
ms
ms
μs

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