M68EVB908GB60E Freescale Semiconductor, M68EVB908GB60E Datasheet - Page 279

• Manufacturer Part Number: M68EVB908GB60E
• Description: BOARD EVAL FOR MC9S08GB60
• Manufacturer: Freescale Semiconductor
• Type: MCUr

Specifications of M68EVB908GB60E

• Contents: Module and Misc Hardware
• Processor To Be Evaluated: MC9S08GB
• Data Bus Width: 8 bit
• Interface Type: RS-232
• Silicon Manufacturer: Freescale
• Core Architecture: HCS08
• Core Sub-architecture: HCS08
• Silicon Core Number: MC9S08
• Silicon Family Name: S08GB
• Kit Contents: GB60 Evaluation Kit
• Rohs Compliant: Yes
• For Use With/related Products: MC9S08GB60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

A.10
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see
Freescale Semiconductor
1
2
3
4
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional
information on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin
EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature
and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor
defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for
Nonvolatile Memory.
0 < f
0 < f
T
T = 25°C
L
FLASH Specifications
to T
Bus
Bus
H
< 8 MHz
< 20 MHz
= –40°C to + 85°C
Characteristic
4
2
(2)
1
3
(2)
Table A-13. FLASH Characteristics
MC9S08GB/GT Data Sheet, Rev. 2.3
(2)
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
prog
Read
10,000
2.08
Min
150
2.1
1.8
15
5
Chapter 4,
100,000
Typical
20,000
4000
100
9
4
“Memory.”
Max
6.67
200
3.6
3.6
3.6
—
—
—
FLASH Specifications
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
µs
V
V
DD
supply.
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