H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 88

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
Table 16 - Derating values tDS/tDH - ac/dc based
Table 17 - Required time t
Slew
V/ns
DQ
rate
a.Cell contents shaded in red are defined as ‘not supported’.
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
ΔtDS
88
59
0
4.0 V/ns
-
-
-
-
-
-
ΔtDH
50
34
0
-
-
-
-
-
-
ΔtDS
88
59
-2
0
3.0 V/ns
-
-
-
-
-
VAC
Slew Rate [V/ns]
above VIH (ac) {below VIL (ac)} for valid transition
ΔtDH
50
34
-4
0
-
-
-
-
-
> 2.0
< 0.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
ΔtDS, ΔDH derating in [ps] AC/DC based
ΔtDS
88
59
-2
-6
0
-
-
-
-
2.0 V/ns
ΔtDH
-10
50
34
-4
0
-
-
-
-
DQS, DQS Differential Slew Rate
ΔtDS
67
-3
8
6
2
1.8 V/ns
-
-
-
-
ΔtDH
42
-2
-8
8
4
-
-
-
-
min
75
57
50
38
34
29
22
13
0
0
ΔtDS
16
14
10
-1
5
1.6 V/ns
-
-
-
-
t
VAC
ΔtDH
-10
16
12
6
0
-
-
-
-
[ps]
a
ΔtDS
-11
22
18
13
1.4 V/ns
7
-
-
-
-
max
-
-
-
-
-
-
-
-
-
-
ΔtDH
-16
20
14
-2
8
-
-
-
-
ΔtDS
-30
26
21
15
-2
1.2 V/ns
-
-
-
-
H5TQ2G63BFR
ΔtDH
-26
24
18
-6
8
-
-
-
-
ΔtDS
-22
29
23
5
1.0 V/ns
-
-
-
-
-
ΔtDH
-10
34
24
10
-
-
-
-
-
88