H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 35

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
5.2 AC and DC Logic Input Levels for Differential Signals
Note1.
Refer to “Overshoot and Undershoot Specification on page 25”
5.3 Differential Input Cross Point Voltage
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe,
each cross point voltage of differential input signals (CK, CK and DQS, DQS) must meet the requirements
below table. The differential input cross point voltage VIX is measured from the actual cross point of true and
complement signal to the midlevel between of VDD and VSS.
Symbol
Symbol
VIHdiff
V
VILdiff
IX
Differential Input Cross Point
Voltage relative to VDD/2
Cross point voltage for differential input signals (CK, DQS)
Differential input logic high
Differential input logic low
Parameter
Parameter
V
IX
Vix Definition
V
IX
- 150
+ 0.200
Min
Min
V
IX
- 0.200
Max
-
Max
150
VDD
CK, DQS
VDD/2
CK, DQS
VSS
H5TQ2G63BFR
Unit
V
V
Unit Notes
mV
Notes
1
1
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