H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 4

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

2. Command Description
3. Absolute Maximum Ratings
4. Operating Conditions
5. AC and DC Input Measurement Levels
6. AC and DC Output Measurement Levels
7. Overshoot and Undershoot Specifications
2.1 Command Truth Table
2.2 Clock Enable (CKE) Truth Table for Synchronous Transitions
4.1 Operating Temperature Condition
4.2 DC Operating Conditions
5.1 AC and DC Logic Input Levels for Single-Ended Signals
5.2 AC and DC Logic Input Levels for Differential Signals
5.3 Differential Input Cross Point Voltage
5.4 Slew Rate Definitions for Single Ended Input Signals
5.5 Slew Rate Definitions for Differential Input Signals
6.1 Single Ended AC and DC Output Levels
6.2 Single Ended Output Slew Rate
6.3 Differential Output Slew Rate
6.4 Reference Load for AC Timing and Output Slew Rate
7.1 Address and Control Overshoot and Undershoot Specifications
7.2 Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications
7.3 34 ohm Output Driver DC Electrical Characteristics
7.4 Output Driver Temperature and Voltage sensitivity
5.4.1 Input Slew Rate for Input Setup Time (tIS) and Data Setup Time (tDS)
5.4.2 Input Slew Rate for Input Hold Time (tIH) and Data Hold Time (tDH)
6.1.1 Differential AC and DC Output Levels