MT48LC8M32B2B5-6 Micron Technology Inc, MT48LC8M32B2B5-6 Datasheet - Page 20

• Manufacturer Part Number: MT48LC8M32B2B5-6
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC8M32B2B5-6

• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/7.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 165mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Full-page READ bursts can be truncated with the
BURST TERMINATE command, and fixed-length
READ bursts may be truncated with a BURST TERMI-
NATE command, provided that auto precharge was
not activated. The BURST TERMINATE command
should be issued x cycles before the clock edge at
NOTE:
09005aef8140ad6d
MT48LC8M32B2_2.fm - Rev. B 10/04 EN
DQM is LOW.
COMMAND
COMMAND
COMMAND
ADDRESS
ADDRESS
ADDRESS
CLK
CLK
CLK
DQ
DQ
DQ
BANK a,
BANK a,
BANK a,
COL n
COL n
COL n
T0
T0
T0
Figure 14: READ-to-PRECHARGE
READ
READ
READ
CL = 1
CL = 2
T1
T1
T1
NOP
NOP
NOP
D
OUT
CL = 3
n
T2
T2
T2
NOP
NOP
NOP
D
n + 1
D
OUT
OUT
n
T3
T3
T3
20
NOP
NOP
NOP
D
n + 2
D
D
n + 1
OUT
OUT
OUT
n
which the last desired data element is valid, where x
equals the CAS latency minus one. This is shown in
Figure 15 on page 21 for each possible CAS latency;
data element n + 3 is the last desired data element of a
longer burst.
PRECHARGE
PRECHARGE
PRECHARGE
(a or all)
(a or all)
(a or all)
T4
BANK
T4
BANK
T4
BANK
X = 0 cycles
X = 1 cycle
D
n + 3
D
n + 2
D
n + 1
OUT
OUT
OUT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
X = 2 cycles
T5
T5
T5
NOP
NOP
NOP
D
n + 3
D
n + 2
OUT
OUT
t RP
t RP
t RP
T6
T6
T6
NOP
NOP
NOP
D
n + 3
OUT
DON’T CARE
BANK a,
BANK a,
BANK a,
ACTIVE
ACTIVE
ACTIVE
T7
T7
T7
ROW
ROW
ROW
©2003 Micron Technology, Inc. All rights reserved.
256Mb: x32
SDRAM