ANXS1750FXC3M AMD (ADVANCED MICRO DEVICES), ANXS1750FXC3M Datasheet - Page 50

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ANXS1750FXC3M

Manufacturer Part Number
ANXS1750FXC3M
Description
Manufacturer
AMD (ADVANCED MICRO DEVICES)
Datasheet

Specifications of ANXS1750FXC3M

Lead Free Status / RoHS Status
Compliant
5.5
Note 1. The SYSCLK signal represents CLKIN and RSTCLK tied together while the SYSCLK# signal represents CLKIN#
Note 2. The SYSCLK and SYSCLK# signals have twice the listed capacitance because they connect to two input pads (i.e.,
50
Symbol
V
V
I
I
V
C
LEAK_P
LEAK_N
Threshold-DC
Threshold-AC
CROSS
PIN
and RSTCLK# tied together.)
CLKIN/RSTCLK and CLKIN#/RSTCLK#).
DC Characteristics
Parameter
Crossing before transition is
detected (DC)
Crossing before transition is
detected (AC)
Leakage current through
P-channel pull up to V
Leakage current through
N-channel pull down to V
(Ground)
Differential signal crossover
Capacitance (Note 2)
31177H
Table 5-5. SYSCLK and SYSCLK# DC Characteristics (Note 1)
Figure 5-2. SYSCLK and SYSCLK# Differential Clock Signals
V
CROSS
CC_CORE
SS
V
Threshold-DC
–250
Min
400
450
= 400 mV
V
Threshold-AC
AMD Geode™ NX Processors Data Book
V
CC_CORE
Max
250
25
= 450 mV
/2 +/– 100
Electrical Specifications
Units
mV
mV
mV
µA
µA
pF

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