MT49H32M9FM-33 IT Micron Technology Inc, MT49H32M9FM-33 IT Datasheet - Page 65

• Manufacturer Part Number: MT49H32M9FM-33 IT
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H32M9FM-33 IT

• Organization: 32Mx9
• Density: 288Mb
• Address Bus: 22b
• Maximum Clock Rate: 300MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 609mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Not Compliant

Figure 39:
PDF: 09005aef80a41b46/Source: 09005aef809f284b
RLDRAM_II_CIO_Core.fm - Rev. D 12/10 EN
COMMAND
ADDRESS
BANK
QVLD
QK#
DK#
CK#
DM
DQ
DK
CK
WRITE-to-READ with Multiplexed Addressing
WRITE
Bank a
T0
Ax
Notes:
1. DI a = data-in for bank a.
2. DO b = data-out from bank b.
3. One subsequent element of each burst follows DI a and DO b.
4. BL = 2.
5. Nominal conditions are assumed for specifications not defined.
6. Bank address can be to any bank, but the subsequent READ can only be to the same bank if
NOP
Ay
T1
t
RC has been met.
WL = 6
288Mb: x9, x18, x36 2.5V V
READ
Bank b
T2
Ax
T3
NOP
Ay
65
RL = 5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4
NOP
EXT
, 1.8V V
T5
NOP
TRANSITIONING DATA
DD
, HSTL, CIO, RLDRAM II
©2004 Micron Technology, Inc. All rights reserved.
T6
NOP
DI
a
T6n
Operations
T7
NOP
DON’T CARE
DO
b
T7n