MT49H32M9FM-33 IT Micron Technology Inc, MT49H32M9FM-33 IT Datasheet - Page 20

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MT49H32M9FM-33 IT

Manufacturer Part Number
MT49H32M9FM-33 IT
Description
Manufacturer
Micron Technology Inc
Type
RLDRAMr
Datasheet

Specifications of MT49H32M9FM-33 IT

Organization
32Mx9
Density
288Mb
Address Bus
22b
Maximum Clock Rate
300MHz
Operating Supply Voltage (typ)
1.8V
Package Type
uBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
609mA
Pin Count
144
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Not Compliant
Electrical Specifications – AC and DC
Absolute Maximum Ratings
Table 7:
AC and DC Operating Conditions
Table 8:
PDF: 09005aef80a41b46/Source: 09005aef809f284b
288Mb_RLDRAM_II_CIO_D2.fm - Rev. M 12/10 EN
Parameter
Description
I/O voltage
Voltage on V
Voltage on V
Voltage on V
Supply voltage
Supply voltage
Isolated output buffer supply
Reference voltage
Termination voltage
Input high (logic 1) voltage
Input low (logic 0) voltage
Output high current
Output low current
Clock input leakage current
Input leakage current
Output leakage current
Reference voltage current
EXT
DD
DDQ
Absolute Maximum Ratings
DC Electrical Characteristics and Operating Conditions
Note 1 applies to the entire table; Unless otherwise noted: +0°C ≤ T
supply relative to V
supply relative to V
supply relative to V
Notes:
Stresses greater than those listed in Table 7 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions outside those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
1. All voltages referenced to V
2. Overshoot: V
3. V
4. Typically the value of V
5. Peak-to-peak AC noise on V
6. V
ing normal operation, V
widths less than
expected to track variations in V
level of the same. Peak-to-peak noise (non-common mode) on V
the DC value. Thus, from V
±2% V
itor.
DDQ
REF
288Mb: x9, x18, x36 2.5V V
SS
is expected to equal V
SS
SS
can be set to a nominal 1.5V ± 0.1V or 1.8V ± 0.1V supply.
DDQ
0V ≤ V
0V ≤ V
0V ≤ V
V
V
Conditions
OH
OL
/2 for AC noise. This measurement is to be taken at the nearest V
IH(AC)
= V
= V
IN
IN
IN
≤ V
DDQ
DDQ
t
≤ V
≤ V
CK/2 or operate at frequencies exceeding
≤ V
DDQ
/2
DD
DD
/2
DD
REF
DDQ
+ 0.7V for t ≤
DDQ
is expected to be 0.5 x V
DDQ
REF
SS
must not exceed V
Symbol
20
V
(GND).
/2, V
/2 of the transmitting device and to track variations in the DC
V
V
V
I
V
I
V
must not exceed ±2% V
V
I
I
DDQ
I
REF
OH
I
EXT
OL
LO
REF
LC
DD
LI
DDQ
TT
IH
IL
REF
.
is allowed ±2% V
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CK/2. Undershoot: V
Electrical Specifications – AC and DC
(1.15 × RQ/5)
(1.15 × RQ/5)
0.49 × V
0.95 × V
V
EXT
V
(V
(V
REF
SSQ
DDQ
DDQ
Min
2.38
1.7
1.4
–5
–5
–5
–5
, 1.8V V
DD
+ 0.1
- 0.3
/2)/
/2)/
DDQ
. Control input signals may not have pulse
REF
C
DDQ
Min
–0.3
–0.3
–0.3
–0.3
≤ +95°C; +1.7V ≤ V
(0.85 × RQ/5)
(0.85 × RQ/5)
REF(DC)
DDQ
of the transmitting device. V
0.51 × V
1.05 × V
V
DD
V
(V
(V
DDQ
REF
/2 for DC error and an additional
Max
DDQ
DDQ
t
2.63
V
IL(AC)
1.9
CK (MAX).
, HSTL, CIO, RLDRAM II
DD
5
5
5
5
.
- 0.1
+ 0.3
/2)/
/2)/
V
DDQ
©2003 Micron Technology, Inc. All rights reserved.
REF
REF
DDQ
≥ –0.5V for t ≤
Max
+2.8
+2.1
+2.1
may not exceed ±2% of
+ 0.3
DD
Units
≤ +1.9V
µA
µA
µA
µA
A
A
V
V
V
V
V
V
V
REF
bypass capac-
t
CK/2. Dur-
Units
9, 10, 11
9, 10, 11
Notes
4, 5, 6
V
V
V
V
REF
7, 8
2, 3
2
2
2
is

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