MT49H32M9FM-33 IT Micron Technology Inc, MT49H32M9FM-33 IT Datasheet - Page 58

• Manufacturer Part Number: MT49H32M9FM-33 IT
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H32M9FM-33 IT

• Organization: 32Mx9
• Density: 288Mb
• Address Bus: 22b
• Maximum Clock Rate: 300MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 609mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Not Compliant

Figure 32:
Figure 33:
PDF: 09005aef80a41b46/Source: 09005aef809f284b
RLDRAM_II_CIO_Core.fm - Rev. D 12/10 EN
COMMAND
ADDRESS
DQ ODT
QVLD
QK#
COMMAND
CK#
DQ
QK
CK
ADDRESS
QKx#
DKx#
QKx
ODT
DKx
CK#
DQ
CK
READ-NOP-READ with ODT
READ-to-WRITE with ODT
Bank a,
READ
Col n
T0
READ
Bank a
Notes:
Add n
Notes:
T0
1. DO an (or bn) = data-out from bank a (or bank b) and address n.
2. BL = 2.
3. One subsequent element of the burst appear after DO an and DO bn.
4. Nominal conditions are assumed for specifications not defined.
1. DO an = data-out from bank a and address n; DI bn = data-in for bank b and address n.
2. BL = 2.
3. One subsequent element of each burst appears after each DO an and DI bn.
4. Nominal conditions are assumed for specifications not defined.
WRITE
Bank b
Add n
NOP
T1
T1
RL = 4
ODT on
288Mb: x9, x18, x36 2.5V V
DQ ODT on
RL = 4
NOP
T2
Bank b,
READ
Col n
T2
NOP
T3
WL = 5
NOP
T3
NOP
T4
58
DO
an
ODT off
T4n
TRANSITIONING DATA
T4
NOP
NOP
T5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DO
an
DQ ODT off
T4n
EXT
, 1.8V V
NOP
T6
bn
DI
T5
NOP
T6n
DQ ODT on
TRANSITIONING DATA
NOP
DD
T7
UNDEFINED
, HSTL, CIO, RLDRAM II
ODT on
T6
NOP
©2004 Micron Technology, Inc. All rights reserved.
DO
bn
DQ ODT off
NOP
T8
T6n
T7
DON’T CARE
NOP
Operations
T9
DQ ODT on
DON’T CARE
NOP