ATF-521P8-TR1 Avago Technologies US Inc., ATF-521P8-TR1 Datasheet - Page 5

• Manufacturer Part Number: ATF-521P8-TR1
• Description: IC PHEMT 2GHZ 4.5V 200MA 8-LPCC
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-521P8-TR1

• Gain: 17dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 7V
• Current Rating: 500mA
• Noise Figure: 1.5dB
• Current - Test: 200mA
• Voltage - Test: 4.5V
• Power - Output: 26.5dBm
• Package / Case: 8-LPCC
• Power Dissipation Pd: 1.5W
• Rf Transistor Case: LPCC
• No. Of Pins: 8
• Frequency Max: 6GHz
• Noise Figure Typ: 1.5dB
• Frequency Min: 50MHz
• Continuous Drain Current Id: 14.8µA
• Configuration: Single Dual Source
• Drain-gate Voltage (max): -5 to 1V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Drain Current Idss Max: 200mA
• Drain Source Voltage Vds: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ATF-521P8 Typical Performance Curves
Tuned for Optimal OIP3
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
5
Figure 8. OIP3 vs. I
Figure 11. P1dB vs. I
Figure 14. Small Signal Gain vs I
at 2 GHz.
50
45
40
35
30
25
20
15
10
35
30
25
20
15
10
17
16
15
14
13
12
11
10
100
100
100
150
150
150
200
200
200
ds
I
I
dq
I
d
d
dq
250
(mA)
and V
250
250
(mA)
(mA)
and V
ds
300
300
300
ds
at 2 GHz.
at 2 GHz.
ds
350
350
350
and V
4.5V
4V
3V
4.5V
4V
3V
4.5V
4V
3V
400
400
400
ds
(at 25°C unless specified otherwise)
Figure 12. P1dB vs. I
Figure 15. Small Signal Gain vs I
at 900 MHz.
Figure 9. OIP3 vs. I
35
30
25
20
15
10
17
16
15
14
13
12
11
10
45
40
35
30
25
20
15
10
100
100
100
150
150
150
200
200
200
I
ds
I
I
dq
d
d
dq
250
250
(mA)
250
(mA)
and V
(mA)
and V
ds
300
300
300
ds
at 900 MHz.
at 900 MHz.
ds
350
350
350
and V
4.5V
4V
3V
4.5V
4V
3V
4.5V
4V
3V
400
400
400
ds
Figure 10. OIP3 vs. I
50
45
40
35
30
25
20
15
10
100
Figure 13. P1dB vs. I
Figure 16. Small Signal Gain vs I
at 3.9 GHz.
35
30
25
20
15
10
12
11
10
9
8
7
6
5
100
100
150
150
150
200
I
200
200
d
ds
(mA)
250
and V
I
dq
I
d
dq
250
250
(mA)
(mA)
and V
ds
300
at 3.9 GHz.
300
300
ds
at 3.9 GHz.
350
4.5V
4V
3V
ds
350
350
and V
4.5V
4V
3V
4.5V
4V
3V
400
400
400
ds