ATF-521P8-TR1 Avago Technologies US Inc., ATF-521P8-TR1 Datasheet

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... Data Sheet Description Avago Technologies’ ATF‑521P8 is a single‑voltage high linearity, low noise E‑pHEMT housed in an 8‑lead JEDEC‑ standard leadless plastic chip carrier (LPCC The device is ideal as a medium‑power, high‑linearity amplifier. Its operating frequency range is from 50 MHz to 6 GHz ...

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... ATF-521P8 Absolute Maximum Ratings Symbol Parameter V Drain – Source Voltage DS V Gate –Source Voltage [ Gate Drain Voltage [ Drain Current [ Gate Current GS P Total Power Dissipation diss P RF Input Power in max. T Channel Temperature CH T Storage Temperature STG θ Thermal Resistance [4] ch_b Notes: 1 ...

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... ATF-521P8 Electrical Specifications T = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified. A Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth Threshold Voltage Idss Saturated Drain Current Gm Transconductance Igss Gate Leakage Current NF Noise Figure [1] G Gain ...

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Ohm 110 Ohm 1.5 pF .02 λ .03 λ RF Input Ohm 2.2 µF Gate Supply Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement ...

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... ATF-521P8 Typical Performance Curves Tuned for Optimal OIP3 4. 100 150 200 250 300 350 400 I (mA) d Figure 8. OIP3 vs. I and GHz 4. 100 150 200 250 300 350 400 I (mA) dq Figure 11. P1dB vs. I and GHz 4. 100 150 200 250 300 350 400 ...

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... ATF-521P8 Typical Performance Curves, Tuned for Optimal OIP3 4. 100 150 200 250 300 350 400 I (mA) dq Figure 17. PAE @ P1dB vs. I and GHz 85°C 25 25°C -40° 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 20. OIP3 vs. Temp and Freq tuned for optimal OIP3 at 4.5V, 200 mA. ...

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... ATF-521P8 Typical Performance Curves Tuned for Optimal P1dB 4. 100 150 200 250 300 350 400 I (mA) d Figure 24. OIP3 vs. I and GHz 4. 100 150 200 250 300 350 400 I (mA) dq Figure 27. P1dB vs. I and GHz 4. 100 150 200 250 300 350 400 ...

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... ATF-521P8 Typical Performance Curves Tuned for Optimal P1dB 4. 100 150 200 250 300 350 400 I dq (mA) Figure 33. PAE @ P1dB vs. I and GHz 85°C 25 25°C -40° 0.5 1.5 2 2 FREQUENCY (GHz) Figure 36. OIP3 vs. Temp and Freq tuned for optimal P1dB at 4.5V, 200 mA. ...

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... ATF-521P8 Typical Scattering Parameters at 25°C, V Freq GHz Mag. Ang. dB 0.1 0.613 ‑96.9 33.2 0.2 0.780 ‑131.8 30.0 0.3 0.831 ‑147.2 27.3 0.4 0.855 ‑156.4 25.1 0.5 0.860 ‑162.0 23.5 0.6 0.878 ‑166.7 22.0 0.7 0.888 ‑170.2 20.8 0.8 0.887 ‑172.6 19 ...

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... ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.823 ‑89.9 34.4 0.2 0.873 ‑128.7 30.5 0.3 0.879 ‑145.5 27.6 0.4 0.885 ‑155.1 25.2 0.5 0.883 ‑161.1 23.6 0.6 0.897 ‑165.9 22.1 0.7 0.895 ‑169.5 20.8 0.8 0.894 ‑171.9 19.6 0.9 0.900 ‑ ...

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... ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.913 ‑84.6 34.2 0.2 0.900 ‑125.0 30.3 0.3 0.896 ‑142.0 27.4 0.4 0.893 ‑152.3 25.1 0.5 0.882 ‑158.4 23.4 0.6 0.895 ‑164.2 21.8 0.7 0.893 ‑167.8 20.6 0.8 0.895 ‑170.8 19.5 0.9 0.897 ‑ ...

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... ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.843 ‑90.5 34.3 0.2 0.879 ‑129.3 30.3 0.3 0.888 ‑146.1 27.4 0.4 0.892 ‑155.6 25.1 0.5 0.886 ‑161.5 23.4 0.6 0.896 ‑165.7 21.8 0.7 0.897 ‑169.5 20.6 0.8 0.898 ‑172.2 19.5 0.9 0.896 ‑ ...

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... ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.867 ‑94.6 33.7 0.2 0.894 ‑132.9 29.4 0.3 0.899 ‑148.2 26.5 0.4 0.896 ‑157.2 24.1 0.5 0.892 ‑162.8 22.4 0.6 0.910 ‑167.4 20.8 0.7 0.906 ‑170.8 19.6 0.8 0.902 ‑173.6 18.4 0.9 0.907 ‑ ...

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... S11 * Figure 1. Input Match for ATF-521P 8 GHz. Figure 1. Input Match for ATF-521P8 at 2 GHz. Thus, it should be obvious from the illustration above that if this device is matched for maximum return loss i.e. S11*, then OIP3 will be sacrificed. Conversely, if ATF‑521P8 is matched for maximum linearity, then 14 return loss will not be greater than 10 dB. For most ap‑ ...

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... Amp + + Frequency Frequency Figure 7. Input and Output Match for ATF-521P8 at 2 GHz. 15 Figure 7 displays the input and output matching selected for ATF‑521P8. In this example the input and output match both essentially function as high pass filters, but the high frequency gain of the device rolls off ...

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... Figure 8. Passive Biasing. Active Bias [2] Due to very high DC power dissipation and small package constraints recommended that ATF‑521P8 use active biasing. The main advantage of an active biasing scheme is the ability to hold the drain to source current constant over a wide range of temperature variations. ...

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... PCB Layout A recommended PCB pad layout for the Leadless Plastic Chip Carrier (LPCC) package used by the ATF‑521P8 is shown in Figure 10. This layout provides plenty of plated through hole vias for good thermal and RF grounding. It also provides a good transition from microstrip to the device package. For more detailed dimensions refer to Section 9 of the data sheet ...

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... The output is matched to Γ high pass network. The next step is to choose the proper DC biasing conditions. From the data sheet, ATF‑521P8 produces good linearity at a drain current of 200mA and a drain to source voltage of 4.5V. Thus to construct the active bias circuit described, the following ...

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... Figure 16. Input and Output Return Loss vs. Frequency. Frequency. Perhaps the most critical system level specification for the ATF‑521P8 lies in its distortion‑less output power. Typically, amplifiers are characterized for linearity by measuring OIP3. This is a two‑tone harmonic mea‑ surement using CW signals. But because WCDMA is a modulated waveform spread across 3 ...

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... ATF‑521P8 demoboard. The first case is done with just the demoboard by itself. The second case is the ATF demoboard mounted on a chassis or metal casing, and the results are given below: Table 4. Thermal resistance measurements. ...

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... End View 21 References [1] Ward, A. (2001) Avago Technologies ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package, 2001 [Internet], Available from: <http://www.avagotech.com> [2] Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers, 2001 [Internet], Available from: <http://www.rf‑solutions.com/pdf/AN‑0002_ajp.pdf> ...

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PCB Land Pattern and Stencil Design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) PIN 1 φ0.20 (7.87) Solder + mask 0.60 (23.62) RF transmission 0.80 (31.50) line 0.15 (5.91) 0.55 (21.65) PCB Land Pattern (top view) Device Orientation REEL USER FEED ...

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Tape Dimensions 10° Max A 0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE THICKNESS DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY ...