ATF-521P8-TR1 Avago Technologies US Inc., ATF-521P8-TR1 Datasheet - Page 3

• Manufacturer Part Number: ATF-521P8-TR1
• Description: IC PHEMT 2GHZ 4.5V 200MA 8-LPCC
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-521P8-TR1

• Gain: 17dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 7V
• Current Rating: 500mA
• Noise Figure: 1.5dB
• Current - Test: 200mA
• Voltage - Test: 4.5V
• Power - Output: 26.5dBm
• Package / Case: 8-LPCC
• Power Dissipation Pd: 1.5W
• Rf Transistor Case: LPCC
• No. Of Pins: 8
• Frequency Max: 6GHz
• Noise Figure Typ: 1.5dB
• Frequency Min: 50MHz
• Continuous Drain Current Id: 14.8µA
• Configuration: Single Dual Source
• Drain-gate Voltage (max): -5 to 1V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Drain Current Idss Max: 200mA
• Drain Source Voltage Vds: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ATF-521P8 Electrical Specifications
T
Symbol
Vgs
Vth
Idss
Gm
Igss
NF
G
OIP3
P1dB
PAE
ACLR
Notes:
1. Measurements obtained using production test board described in Figure 6.
2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002‑06)
– Test Model 1
– Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
– Freq = 2140 MHz
– Pin = ‑5 dBm
– Chan Integ Bw = 3.84 MHz
Input
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a trade-
off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
3
A
= 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified.
Line Including
Transmission
(0.3 dB loss)
Gate Bias T
50 Ohm
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure
Gain
Output 3
Intercept Point
Output 1dB
Compressed
Power Added Efficiency
Adjacent Channel Leakage
Power Ratio
[1]
rd
Order
[1,2]
[1]
[1]
[1]
Matching Circuit
Γ_ang = -166°
Γ_mag = 0.55
(1.1 dB loss)
Input
Vds = 4.5V, Ids = 200 mA
Vds = 4.5V, Ids = 16 mA
Vds = 4.5V, Vgs = 0V
Vds = 4.5V, Gm = ∆Idss/∆Vgs;
Vgs = Vgs1 ‑ Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Vds = 0V, Vgs = ‑4V
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
Offset BW = 5 MHz
Offset BW = 10 MHz
DUT
Matching Circuit
Γ_mag = 0.35
Γ_ang = 168°
(0.9 dB loss)
Output
Units
V
V
µA
mmho
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
%
%
dBc
dBc
Min.
—
—
—
—
‑20
—
—
15.5
—
38.5
—
25
—
45
—
—
—
Transmission
(0.3 dB loss)
Drain Bias T
Line and
50 Ohm
Typ.
0.62
0.28
14.8
1300
0.49
1.5
1.2
17
17.2
42
42.5
26.5
26.5
60
56
‑51.4
‑61.5
Output
Max.
—
—
—
—
—
—
—
18.5
—
—
—
—
—
—
—
—
—