ATF-521P8-TR1 Avago Technologies US Inc., ATF-521P8-TR1 Datasheet - Page 4

IC PHEMT 2GHZ 4.5V 200MA 8-LPCC

ATF-521P8-TR1

Manufacturer Part Number
ATF-521P8-TR1
Description
IC PHEMT 2GHZ 4.5V 200MA 8-LPCC
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-521P8-TR1

Gain
17dB
Transistor Type
pHEMT FET
Frequency
2GHz
Voltage - Rated
7V
Current Rating
500mA
Noise Figure
1.5dB
Current - Test
200mA
Voltage - Test
4.5V
Power - Output
26.5dBm
Package / Case
8-LPCC
Power Dissipation Pd
1.5W
Rf Transistor Case
LPCC
No. Of Pins
8
Frequency Max
6GHz
Noise Figure Typ
1.5dB
Frequency Min
50MHz
Continuous Drain Current Id
14.8µA
Configuration
Single Dual Source
Drain-gate Voltage (max)
-5 to 1V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Drain Current Idss Max
200mA
Drain Source Voltage Vds
4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-521P8-TR1
Manufacturer:
AVAGO
Quantity:
12 367
Part Number:
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Manufacturer:
LATTICE
Quantity:
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Part Number:
ATF-521P8-TR1
Manufacturer:
AGILENT
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Part Number:
ATF-521P8-TR1G
Manufacturer:
AVAGO
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Part Number:
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Manufacturer:
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RF Input
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line
tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a Maury load pull system at 4.5V, 200
mA quiesent bias:
Freq
(GHz)
0.9
2
2.4
3.9
Freq
(GHz)
0.9
2
2.4
3.9
4
1.5 pF
2.2 µF
Mag
0.413
0.368
0.318
0.463
Mag
0.587
0.614
0.649
0.552
Gamma Source
Gamma Source
Supply
Gate
12 nH
15 Ohm
1 pF
Ang (deg)
10.5
162.0
169.0
‑134.0
Ang (deg)
12.7
126.1
145.0
‑162.8
50 Ohm
.02 λ
110 Ohm
.03 λ
Mag
0.314
0.538
0.566
0.495
Mag
0.613
0.652
0.682
0.670
Gamma Load
Gamma Load
DUT
Optimum OIP3
Ang (deg)
179.0
‑176.0
‑169.0
‑159.0
Optimum P1dB
Ang (deg)
‑172.1
‑172.5
‑171.5
‑151.2
110 Ohm
.03 λ
50 Ohm
.02 λ
2.2 µF
OIP3
(dBm)
42.7
42.5
42.0
40.3
OIP3
(dBm)
39.1
39.5
40.0
38.1
Supply
Drain
1.5 pF
47 nH
3.9 nH
Gain
(dB)
16.0
15.8
14.1
9.6
Gain
(dB)
14.5
12.9
12.0
9.6
RF Output
P1dB
(dBm)
27.0
27.5
27.4
27.3
P1dB
(dBm)
29.3
29.3
29.4
27.9
PAE
(%)
54.0
55.3
53.5
43.9
PAE
(%)
49.6
49.5
46.8
39.1

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