ATF-521P8-TR1 Avago Technologies US Inc., ATF-521P8-TR1 Datasheet - Page 21

• Manufacturer Part Number: ATF-521P8-TR1
• Description: IC PHEMT 2GHZ 4.5V 200MA 8-LPCC
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-521P8-TR1

• Gain: 17dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 7V
• Current Rating: 500mA
• Noise Figure: 1.5dB
• Current - Test: 200mA
• Voltage - Test: 4.5V
• Power - Output: 26.5dBm
• Package / Case: 8-LPCC
• Power Dissipation Pd: 1.5W
• Rf Transistor Case: LPCC
• No. Of Pins: 8
• Frequency Max: 6GHz
• Noise Figure Typ: 1.5dB
• Frequency Min: 50MHz
• Continuous Drain Current Id: 14.8µA
• Configuration: Single Dual Source
• Drain-gate Voltage (max): -5 to 1V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Drain Current Idss Max: 200mA
• Drain Source Voltage Vds: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Thus, for reliable operation of ATF‑521P8 and extended
MTBF, it is recommended to use some form of thermal
heatsinking. This may include any or all of the following
suggestions:
• Maximize vias underneath and around package;
• Maximize exposed surface metal;
• Use 1 oz or greater copper clad;
• Minimize board thickness;
• Metal heat sinks or extrusions;
• Fans or forced air;
• Mount PCB to Chassis.
Summary
A high linearity Tx driver amplifier for WCDMA has been
presented and designed using Agilent’s ATF‑521P8. This
includes RF, DC and good thermal dissipation practices
for reliable lifetime operation. A summary of the typical
performance for ATF‑521P8 demoboard at 2140 MHz is
as follows:
Demo Board Results at 2140 MHz
Gain
OIP3
ACLR
P1dB
NF
2 x 2 LPCC (JEDEC DFP-N) Package Dimensions
21
A
E1
A1
L
End View
Bottom View
R
D1
P
16.5 dB
41.2 dBm
‑58 dBc
24.8 dBm
1.55 dB
A2
b
e
pin1
pin1
1
2
3
4
Top View
End View
2PX
D
References
[1] Ward, A. (2001) Avago Technologies ATF-54143 Low Noise
Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic
Package, 2001 [Internet], Available from:
<http://www.avagotech.com>
[2] Biasing Circuits and Considerations for GaAs MESFET
Power Amplifiers, 2001 [Internet], Available from:
<http://www.rf‑solutions.com/pdf/AN‑0002_ajp.pdf>
[Accessed 22 August, 2002]
Device Models
Refer to Avago Technologies' Web Site:
www.avagotech.com
Ordering Information
Part Number
ATF‑521P8‑TR1
ATF‑521P8‑TR2
ATF‑521P8‑BLK
8
7
6
5
A
E
No. of Devices
DIMENSIONS ARE IN MILLIMETERS
SYMBOL
A1
A2
D1
E1
A
D
P
b
E
e
L
3000
10000
100
0.225
MIN.
0.70
0.65
1.45
0.35
1.9
1.9
0.2
Container
0
DIMENSIONS
0.203 REF
0.50 BSC
NOM.
0.25
0.75
0.02
0.25
0.80
0.4
2.0
2.0
1.6
7” Reel
13”Reel
antistatic bag
MAX.
0.275
0.80
0.05
0.95
1.75
0.45
2.1
2.1
0.3