C8051F336DK Silicon Laboratories Inc, C8051F336DK Datasheet - Page 92

DEV KIT FOR C8051F336

C8051F336DK

Manufacturer Part Number
C8051F336DK
Description
DEV KIT FOR C8051F336
Manufacturer
Silicon Laboratories Inc
Type
MCUr
Datasheets

Specifications of C8051F336DK

Contents
Evaluation Board, Power Supply, USB Cables, Adapter and Documentation
Processor To Be Evaluated
C8051F33x
Interface Type
USB, UART
Operating Supply Voltage
7 V to 15 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
C8051F336
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1430
C8051F336/7/8/9
16.1.3. Flash Write Procedure
Flash bytes are programmed by software with the following sequence:
1. Disable interrupts (recommended).
2. Erase the 512-byte Flash page containing the target location, as described in
Section
16.1.2.
3. Set the PSWE bit (register PSCTL).
4. Clear the PSEE bit (register PSCTL).
5. Write the first key code to FLKEY: 0xA5.
6. Write the second key code to FLKEY: 0xF1.
7. Using the MOVX instruction, write a single data byte to the desired location within the 512-byte sector.
8. Clear the PSWE bit.
Steps 5–7 must be repeated for each byte to be written. After Flash writes are complete, PSWE should be
cleared so that MOVX instructions do not target program memory.
16.2. Non-volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX
write instruction and read using the MOVC instruction. Note: MOVX read instructions always target XRAM.
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Rev.1.0

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