IDT7130SA55P IDT, Integrated Device Technology Inc, IDT7130SA55P Datasheet - Page 4

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IDT7130SA55P

Manufacturer Part Number
IDT7130SA55P
Description
IC SRAM 8KBIT 55NS 48DIP
Manufacturer
IDT, Integrated Device Technology Inc
Series
-r
Datasheets

Specifications of IDT7130SA55P

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
8K (1K x 8)
Speed
55ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-DIP
Density
8Kb
Access Time (max)
55ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
20b
Package Type
PDIP
Operating Temp Range
0C to 70C
Number Of Ports
2
Supply Current
155mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Through Hole
Pin Count
48
Word Size
8b
Number Of Words
1K
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
7130SA55P

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Absolute Maximum Ratings
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
2. V
Capacitance
STQFP and TQFP Packages Only
NOTES:
1. This parameter is determined by device characterization but is not production
2. 3dV references the interpolated capacitance when the input and output signals
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
NOTE:
1. At Vcc
I
V
T
T
OUT
BIAS
STG
Symbol
TERM
Symbol
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
tested.
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of the specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
maximum, and is limited to < 20mA for the period of V
C
switch from 0V to 3V or from 3V to 0V.
Symbol
C
TERM
OUT
V
V
V
IN
|I
(2)
|I
LO
OL
OL
OH
LI
|
|
must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
<
2.0V leakages are undefined.
Under Bias
Storage
DC Output
Current
Input Capacitance
Output Capacitance
Terminal Voltage
with Respect
to GND
Temperature
Temperature
Input Leakage Current
Output Leakage Current
Output Low Voltage (I/O
Open Drain Output
Low Voltage (BUSY, INT)
Output High Voltage
Parameter
Rating
(T
(1)
A
Parameter
= +25°C, f = 1.0MHz)
Commercial
& Industrial
-0.5 to +7.0
-55 to +125
-65 to +150
(1)
(1)
0
-I/O
50
V
Conditions
7
V
OUT
)
IN
= 3dV
= 3dV
TERM
-0.5 to +7.0
-65 to +135
-65 to +150
Military
> Vcc + 10%.
50
(1)
I
I
I
V
V
CE = V
OL
OL
OH
CC
CC
Max.
10
= 4mA
= 16mA
9
= -4mA
= 5.5V, V
- 5.5V,
IH
2689 tbl 01
2689 tbl 05
, V
Unit
Unit
Test Conditions
mA
pF
pF
o
o
V
C
C
OUT
IN
= 0V to V
= 0V to V
4
Recommended DC Operating
Conditions
NOTES:
1. V
2. V
Recommended Operating
Temperature and Supply Voltage
NOTES:
1. This is the parameter T
Military
Commercial
Industrial
Symbol
GND
V
V
V
IL
TERM
CC
Military, Industrial and Commercial Temperature Ranges
IH
CC
IL
CC
(min.) > -1.5V for pulse width less than 10ns.
(V
Grade
must not exceed Vcc + 10%.
CC
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
= 5.0V ± 10%)
Parameter
Min.
2.4
___
___
___
___
-55
-40
A
7130SA
7140SA
0
Temperature
. This is the "instant on" case temperature.
O
O
Ambient
C to +70
O
C to +125
C to +85
Max.
0.4
0.5
___
10
10
O
C
O
O
C
C
-0.5
Min.
4.5
2.2
Min.
0
2.4
GND
___
___
___
___
(1)
0V
0V
0V
7130LA
7140LA
Typ.
5.0
____
____
0
Max.
0.4
0.5
5.0V
5.0V
5.0V
___
5
5
Max.
6.0
5.5
0.8
Vcc
0
+
+
+
(2)
10%
10%
10%
2689 tbl 04
2689 tbl 03
2689 tbl 02
Unit
µA
µA
Unit
V
V
V
V
V
V
V
(1)

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