FDP027N08B_F102 Fairchild Semiconductor, FDP027N08B_F102 Datasheet - Page 7

• Manufacturer Part Number: FDP027N08B_F102
• Description: MOSFET N-Channel PwrTrench 80V 223A 2.7mOhm
• Manufacturer: Fairchild Semiconductor

Specifications of FDP027N08B_F102

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 223 A
• Resistance Drain-source Rds (on): 2.21 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 246 W
• Factory Pack Quantity: 400

©2011 Fairchild Semiconductor Corporation
FDP027N08B_F102 Rev. C3
( Driver )
( Driver )
( DUT )
( DUT )
( DUT )
( DUT )
V
V
I
I
V
V
GS
GS
SD
SD
DS
DS
V
V
GS
GS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
R
R
G
G
Driver
Driver
DUT
DUT
I
I
FM
FM
I
I
SD
SD
D =
D =
D =
, Body Diode Forward Current
, Body Diode Forward Current
Forward Voltage Drop
Forward Voltage Drop
--------------------------
--------------------------
--------------------------
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Body Diode
Body Diode
Same Type
Same Type
V
V
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
+
+
as DUT
as DUT
_
_
DS
DS
• dv/dt controlled by R
• dv/dt controlled by R
• I
• I
V
V
SD
SD
SD
SD
Body Diode Reverse Current
Body Diode Reverse Current
controlled by pulse period
controlled by pulse period
7
I
I
RM
RM
L
L L
G
G
di/dt
di/dt
V
V
V
V
10V
10V
DD
DD
DD
DD
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