FDP027N08B_F102 Fairchild Semiconductor, FDP027N08B_F102 Datasheet - Page 4

• Manufacturer Part Number: FDP027N08B_F102
• Description: MOSFET N-Channel PwrTrench 80V 223A 2.7mOhm
• Manufacturer: Fairchild Semiconductor

Specifications of FDP027N08B_F102

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 223 A
• Resistance Drain-source Rds (on): 2.21 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 246 W
• Factory Pack Quantity: 400

©2011 Fairchild Semiconductor Corporation
FDP027N08B_F102 Rev. C3
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Eoss vs. Drain to Source Voltage
2000
1000
0.01
1.08
1.04
1.00
0.96
0.92
100
0.1
10
1
6
5
4
3
2
1
0
-80
1
0
*Notes:
Operation in This Area
is Limited by R
1. T
2. T
3. Single Pulse
vs. Temperature
vs. Case Temperature
-40
C
J
= 175
= 25
Switching Capability
V
T
DS
V
J
, Junction Temperature
20
DS
o
, Drain to Source Voltage
o
C
0
C
, Drain-Source Voltage [V]
DS(on)
40
10
40
80
10ms
DC
1ms
100us
120
*Notes:
[
60
1. V
2. I
o
10us
C
[
D
V
GS
]
160
= 250
]
100
= 0V
μ
A
200
200
80
(Continued)
4
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
200
100
250
200
150
100
2.0
1.5
1.0
0.5
Figure 12. Unclamped Inductive
10
50
0.001
-100
1
0
25
R
θ
JC
= 0.61
0.01
-50
50
T
vs. Temperature
T
J
o
C
t
, Junction Temperature
C/W
AV
, Case Temperature
T
, TIME IN AVALANCHE (ms)
J
0.1
75
= 150
0
o
C
100
50
1
T
J
100
125
10
= 25
[
o
*Notes:
V
C
[
GS
1. V
2. I
]
o
o
C
= 10V
C
D
150
]
100
GS
150
= 100A
= 10V
www.fairchildsemi.com
1000
200
175