FDP027N08B_F102 Fairchild Semiconductor, FDP027N08B_F102 Datasheet - Page 3

• Manufacturer Part Number: FDP027N08B_F102
• Description: MOSFET N-Channel PwrTrench 80V 223A 2.7mOhm
• Manufacturer: Fairchild Semiconductor

Specifications of FDP027N08B_F102

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 223 A
• Resistance Drain-source Rds (on): 2.21 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 246 W
• Factory Pack Quantity: 400

©2011 Fairchild Semiconductor Corporation
FDP027N08B_F102 Rev. C3
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
30000
10000
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
1000
500
100
100
3.0
2.5
2.0
1.5
1.0
10
10
5
0.1
0.1
0
*Note:
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1. V
2. f = 1MHz
Drain Current and Gate Voltage
GS
*Notes:
100
V
1. 250
2. T
V
DS
= 0V
DS
, Drain-Source Voltage [V]
C
, Drain-Source Voltage[V]
= 25
I
μ
D
s Pulse Test
, Drain Current [A]
(
1
C ds = shorted
o
200
C
V
V
GS
GS
= 10V
= 20V
300
)
1
*Note: T
10
V
GS
= 15.0V
400
C
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
= 25
C
C
C
o
iss
C
oss
rss
500
80
4
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
500
100
Figure 6. Gate Charge Characteristics
500
100
10
10
10
1
1
2.5
8
6
4
2
0
0.2
0
*Notes:
1. V
2. 250
3.0
V
DS
0.4
SD
μ
Variation vs. Source Current
and Temperature
= 10V
30
s Pulse Test
175
, Body Diode Forward Voltage [V]
V
3.5
GS
Q
o
175
g
, Gate-Source Voltage[V]
C
, Total Gate Charge [nC]
o
4.0
0.6
V
V
V
C
DS
DS
DS
60
= 16V
= 40V
= 64V
4.5
0.8
-55
5.0
90
*Notes:
1. V
2. 250
o
*Note: I
C
25
GS
1.0
o
μ
5.5
C
= 0V
s Pulse Test
25
120
D
o
C
= 100A
6.0
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1.2 1.3
6.5
150