FDP027N08B_F102 Fairchild Semiconductor, FDP027N08B_F102 Datasheet - Page 5

• Manufacturer Part Number: FDP027N08B_F102
• Description: MOSFET N-Channel PwrTrench 80V 223A 2.7mOhm
• Manufacturer: Fairchild Semiconductor

Specifications of FDP027N08B_F102

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 223 A
• Resistance Drain-source Rds (on): 2.21 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 246 W
• Factory Pack Quantity: 400

©2011 Fairchild Semiconductor Corporation
FDP027N08B_F102 Rev. C3
Typical Performance Characteristics
0.005
0.01
0.1
1
10
-5
Single pulse
0.05
0.02
0.01
0.5
0.2
0.1
Figure 13. Transient Thermal Response Curve
10
-4
Rectangular Pulse Duration [sec]
(Continued)
10
-3
5
10
-2
*Notes:
1. Z
2. Duty Factor, D= t
3. T
P
DM
θ
JM
JC
- T
(t) = 0.61
10
C
t
= P
1
-1
t
2
DM
o
C/W Max.
* Z
1
θ
/t
JC
2
(t)
1
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