FDP027N08B_F102 Fairchild Semiconductor, FDP027N08B_F102 Datasheet - Page 2

• Manufacturer Part Number: FDP027N08B_F102
• Description: MOSFET N-Channel PwrTrench 80V 223A 2.7mOhm
• Manufacturer: Fairchild Semiconductor

Specifications of FDP027N08B_F102

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 223 A
• Resistance Drain-source Rds (on): 2.21 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 246 W
• Factory Pack Quantity: 400

©2011 Fairchild Semiconductor Corporation
FDP027N08B_F102 Rev. C3
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3mH, I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
I
I
V
R
g
C
C
C
C
Q
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
DS(on)
iss
oss
rss
oss
SD
g(tot)
gs
gs2
gd
rr
SD
Symbol
DSS
Device Marking
J
≤ 100A, di/dt ≤ 200A/μs, V
DSS
(er)
FDP027N08B
AS
= 24.72A, R
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
G
= 25Ω, Starting T
DD
≤ BV
FDP027N08B_F102
DSS
Parameter
, Starting T
Device
J
= 25°C
T
J
= 25°C
C
= 25
o
C unless otherwise noted
Package
TO-220
I
I
V
V
V
V
V
V
V
V
V
dI
V
V
f = 1MHz
V
V
I
f = 1MHz
D
D
D
DS
DS
GS
DD
GS
GS
GS
GS
GS
DS
DS
DS
DS
F
= 250μA, V
= 250μA, Referenced to 25
= 100A
/dt = 100A/μs
= 64V, V
= 64V, T
= 0V, I
= ±20V, V
= 10V, I
= 40V, V
= 40V, V
= 40V, V
= 40V, I
= 10V, R
= 0V, V
= V
= 10V, I
DS
Test Conditions
, I
2
SD
DD
D
D
D
D
C
GS
GS
GS
GS
GEN
GS
= 100A
= 100A
= 100A
= 100A
DS
= 250μA
= 150
= 40V, I
= 0V
= 0V
= 0V
= 10V
= 0V
= 0V
= 4.7Ω
F102: Trimmed Leads
o
C
SD
Description
= 100A
o
(Note 4)
(Note 4)
C
Min.
2.5
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10170
1670
3025
Typ.
0.05
2.21
112
227
137
2.4
80
35
56
25
28
47
66
87
41
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
13530
Max.
±100
2220
223*
500
178
892
104
142
184
1.3
4.5
2.7
92
50
1
-
-
-
-
-
-
-
-
-
-
-
V/
Unit
mΩ
nC
nC
nC
nC
μA
nA
pF
pF
pF
pF
nC
ns
Ω
ns
ns
ns
ns
V
V
S
A
A
V
o
C