AT25DL081-MHN-T Adesto Technologies, AT25DL081-MHN-T Datasheet - Page 50

• Manufacturer Part Number: AT25DL081-MHN-T
• Description: Flash 8M 1.65-1.95V 100Mhz Serial Flash
• Manufacturer: Adesto Technologies

Specifications of AT25DL081-MHN-T

• Rohs: yes
• Data Bus Width: 8 bit
• Memory Type: Flash
• Memory Size: 8 Mbit
• Architecture: Flexible, Uniform Erase
• Timing Type: Synchronous
• Interface Type: SPI
• Supply Voltage - Max: 1.95 V
• Supply Voltage - Min: 1.65 V
• Maximum Operating Current: 20 mA
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: UDFN-8

14.6
14.7
14.8
14.9
Program and Erase Characteristics
Notes: 1.
Power-up Condition
Input Test Waveforms and Measurement Levels
Output Test Load
Symbol
t
t
t
t
t
t
t
t
Symbol
t
t
V
Driving
Levels
PP
BP
BLKE
CHPE
SUSP
RES
OTPP
WRSR
VCSL
PUW
t
POR
R
AC
Device
(1)
Under
, t
Test
(1)
(1)
(1)(2)
(2)
F
< 2ns (10% to 90%)
2.
Maximum values indicate worst-case performance after 100,000 erase/program cycles.
Not 100% tested (value guaranteed by design and characterization).
0.9V
0.1V
Parameter
Page Program Time (256 bytes)
Byte Program Time
Block Erase Time
Chip Erase Time
Suspend Time
Resume Time
OTP Security Register Program Time
Write Status Register Time
Parameter
Minimum V
Power-up Device Delay Before Program or Erase Allowed
Power-on Reset Voltage
CC
CC
CC
15pF (frequencies above 70MHz)
or
30pF
to Chip Select Low Time
V
CC
/2
AC
Measurement
Level
4KB
32KB
64KB
Program
Erase
Program
Erase
AT25DL081 [DATASHEET]
Min
8732E–DFLASH–1/2013
Min
1.2
Typ
250
550
200
70
1.0
50
10
10
25
10
12
8
Max
1.55
Max
200
600
950
500
200
10
3.0
16
20
40
20
20
Units
Units
ms
sec
μs
ms
ms
μs
μs
μs
μs
ns
V
50