AT25DL081-MHN-T Adesto Technologies, AT25DL081-MHN-T Datasheet

AT25DL081-MHN-T

Manufacturer Part Number

AT25DL081-MHN-T

Description

Flash 8M 1.65-1.95V 100Mhz Serial Flash

Manufacturer

Adesto Technologies

Datasheet

1.AT25DL081-MHN-T.pdf (59 pages)

Specifications of AT25DL081-MHN-T

Rohs

yes

Data Bus Width

8 bit

Memory Type

Flash

Memory Size

8 Mbit

Architecture

Flexible, Uniform Erase

Timing Type

Synchronous

Interface Type

SPI

Supply Voltage - Max

1.95 V

Supply Voltage - Min

1.65 V

Maximum Operating Current

20 mA

Operating Temperature

- 40 C to + 85 C

Mounting Style

SMD/SMT

Package / Case

UDFN-8

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Features



Automatic checking and reporting of erase/program failures

Single 1.65V - 1.95V supply

Serial Peripheral Interface (SPI) compatible

Very high operating frequencies

Flexible, optimized erase architecture for code + data storage applications

Individual sector protection with Global Protect/Unprotect feature

Hardware controlled locking of protected sectors via WP pin

Sector Lockdown with permanent freeze option

128-byte, One-Time Programmable (OTP) Security Register

Flexible programming

Fast Program and Erase times

Program and Erase Suspend/Resume

Software controlled reset

JEDEC Standard Manufacturer and Device ID Read Methodology

Low power dissipation

Endurance: 100,000 program/erase cycles

Data retention: 20 years

Complies with full industrial temperature range

Industry standard green (Pb/halide-free/RoHS-compliant) package options



Supports SPI Modes 0 and 3

Supports RapidS

Supports Dual-Input Program and Dual-Output Read

100MHz for RapidS

85MHz for SPI

Clock-to-output time (t

Uniform 4KB, 32KB, and 64KB Block Erase

Full Chip Erase

16 sectors of 64KB each

Make any combination of 64KB sectors permanently read-only

64-bytes factory pre-programmed, 64-bytes user programmable

Byte/Page Program (1 to 256 bytes)

1.0ms typical Page Program (256 bytes) time

50ms typical 4KB Block Erase time

250ms typical 32KB Block Erase time

550ms typical 64KB Block Erase time

10mA Active Read current (typical at 20MHz)

8μA Deep Power-Down current (typical)

8-lead SOIC (0.150” wide)

8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

8-ball dBGA (WLCSP)

8-Mbit, 1.65V Minimum SPI Serial Flash Memory

™

operation

) of 5ns maximum

with Dual-I/O Support

AT25DL081

DATASHEET

8732E–DFLASH–1/2013

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