M24LR04E-RDW6T/2 STMicroelectronics, M24LR04E-RDW6T/2 Datasheet - Page 85

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M24LR04E-RDW6T/2

Manufacturer Part Number
M24LR04E-RDW6T/2
Description
EEPROM 4-Kbit Dual EEPROM 1.8 to 5.5V 13.56Mhz
Manufacturer
STMicroelectronics
Datasheet

Specifications of M24LR04E-RDW6T/2

Product Category
EEPROM
Memory Size
4 Kbit
Maximum Clock Frequency
400 KHz
Maximum Operating Current
20 uA
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8
Factory Pack Quantity
1

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M24LR04E-R
Figure 55. Write Single Block frame exchange between VCD and M24LR04E-R
M24LR04E-
M24LR04E-
VCD
R
R
Table 46.
Response parameter:
When configured in the RF busy mode, the RF WIP/BUSY pin is tied to 0 from the SOF that
starts the Write Single Block command to the end of the M24LR04E-R response.
When configured in the RF write in progress mode, the RF WIP/BUSY pin is tied to 0 for the
duration of the internal write cycle (from the end of a valid write single block command to the
beginning of the M24LR04E-R response).
Response
SOF
SOF
Error code as Error_flag is set:
Block request
Write Single
0Fh: error with no information given
10h: the specified block is not available
12h: the specified block is locked and its contents cannot be changed
13h: the specified block was not successfully programmed
Write Single Block response format when Error_flag is set
Response_
8 bits
flags
EOF
<------------------- W
Doc ID 022208 Rev 5
Error code
<-t
1
8 bits
-> SOF
Block response
Write Single
t
---------------> SOF
CRC16
16 bits
EOF
Block response
Write sequence when
Write Single
Command codes
error
Response
EOF
EOF
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