M24LR04E-RDW6T/2 STMicroelectronics, M24LR04E-RDW6T/2 Datasheet - Page 136
M24LR04E-RDW6T/2
Manufacturer Part Number
M24LR04E-RDW6T/2
Description
EEPROM 4-Kbit Dual EEPROM 1.8 to 5.5V 13.56Mhz
Manufacturer
STMicroelectronics
Datasheet
1.M24LR04E-RDW6T2.pdf
(142 pages)
Specifications of M24LR04E-RDW6T/2
Product Category
EEPROM
Memory Size
4 Kbit
Maximum Clock Frequency
400 KHz
Maximum Operating Current
20 uA
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8
Factory Pack Quantity
1
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M24LR04E-RDW6T/2
Manufacturer:
ST
Quantity:
20 000
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Part numbering
31
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Part numbering
Table 129. Ordering information scheme for bare die devices or packaged devices
1. Delivery type: wafer tested, unsawn, without backgrinding. Wafer thickness: 725 µm ±20 µm.
2. For packaged devices only.
Example:
Device type
M24LR = dual interface EEPROM
04 = memory size in Kbit
E = support for energy harvesting
Operating voltage
R = V
Package
MN = SO8N (150 mils width)
MC = UFDFPN8 (MLP8)
DW = TSSOP8
UW20 = inkless, unsawn wafer, with no backgrinding
Device grade
6 = industrial: device tested with standard
test flow over –40 to 85 °C
Option
T = Tape and reel packing
Capacitance
/2 = 27.5 pF
Bad chip identification by STIF wafer maps provided by STMicroelectronics.
CC
(2)
= 1.8 to 5.5 V
(2)
Doc ID 022208 Rev 5
M24LR04E-R
(1)
MN
6
T
/2
M24LR04E-R
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