M24LR04E-RDW6T/2 STMicroelectronics, M24LR04E-RDW6T/2 Datasheet - Page 58

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M24LR04E-RDW6T/2

Manufacturer Part Number
M24LR04E-RDW6T/2
Description
EEPROM 4-Kbit Dual EEPROM 1.8 to 5.5V 13.56Mhz
Manufacturer
STMicroelectronics
Datasheet

Specifications of M24LR04E-RDW6T/2

Product Category
EEPROM
Memory Size
4 Kbit
Maximum Clock Frequency
400 KHz
Maximum Operating Current
20 uA
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8
Factory Pack Quantity
1

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M24LR04E-R to VCD frames
12.3
12.3.1
12.3.2
58/142
EOF when using one subcarrier
High data rate
The EOF comprises a logic 0 that includes eight pulses at 423.75 kHz and an unmodulated
time of 18.88 µs, followed by 24 pulses at 423.75 kHz (f
of 56.64 µs, as shown in
Figure 41. End of frame, high data rate, one subcarrier
For the Fast commands, the EOF comprises a logic 0 that includes four pulses at
423.75 kHz and an unmodulated time of 9.44 µs, followed by 12 pulses at 423.75 kHz
(f
Figure 42. End of frame, high data rate, one subcarrier, fast commands
Low data rate
The EOF comprises a logic 0 that includes 32 pulses at 423.75 kHz and an unmodulated
time of 75.52 µs, followed by 96 pulses at 423.75 kHz (f
226.56 µs, as shown in
Figure 43. End of frame, low data rate, one subcarrier
For the Fast commands, the EOF comprises a logic 0 that includes 16 pulses at 423.75 kHz
and an unmodulated time of 37.76 µs, followed by 48 pulses at 423.75 kHz (f
unmodulated time of 113.28 µs, as shown in
Figure 44. End of frame, low data rate, one subcarrier, Fast commands
C
/32) and an unmodulated time of 37.76 µs, as shown in
151.04µs
37.76µs
75.52µs
Figure
18.88µs
Figure
Doc ID 022208 Rev 5
43.
41.
Figure
226.56µs
56.64µs
44.
453.12µs
C
C
113.28µs
/32), and by an unmodulated time
/32) and an unmodulated time of
Figure
42.
ai12085
ai12087
C
M24LR04E-R
/32) and an
ai12084
ai12086

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