M24LR04E-RDW6T/2 STMicroelectronics, M24LR04E-RDW6T/2 Datasheet - Page 56

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M24LR04E-RDW6T/2

Manufacturer Part Number
M24LR04E-RDW6T/2
Description
EEPROM 4-Kbit Dual EEPROM 1.8 to 5.5V 13.56Mhz
Manufacturer
STMicroelectronics
Datasheet

Specifications of M24LR04E-RDW6T/2

Product Category
EEPROM
Memory Size
4 Kbit
Maximum Clock Frequency
400 KHz
Maximum Operating Current
20 uA
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8
Factory Pack Quantity
1

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M24LR04E-R to VCD frames
12
12.1
12.1.1
12.1.2
56/142
M24LR04E-R to VCD frames
Frames are delimited by an SOF and an EOF. They are implemented using code violation.
Unused options are reserved for future use. For the low data rate, the same subcarrier
frequency or frequencies is/are used. In this case, the number of pulses is multiplied by 4.
For the Fast commands using one subcarrier, all pulse numbers and times are divided by 2.
SOF when using one subcarrier
High data rate
The SOF includes an unmodulated time of 56.64 µs, followed by 24 pulses at 423.75 kHz
(f
pulses at 423.75 kHz, as shown in
Figure 35. Start of frame, high data rate, one subcarrier
For the Fast commands, the SOF comprises an unmodulated time of 28.32 µs, followed by
12 pulses at 423.75 kHz (f
9.44 µs followed by four pulses at 423.75 kHz, as shown in
Figure 36. Start of frame, high data rate, one subcarrier, fast commands
Low data rate
The SOF comprises an unmodulated time of 226.56 µs, followed by 96 pulses at 423.75 kHz
(f
at 423.75 kHz, as shown in
Figure 37. Start of frame, low data rate, one subcarrier
C
C
/32), and a logic 1 that consists of an unmodulated time of 18.88 µs followed by eight
/32), and a logic 1 that consists of an unmodulated time of 75.52 µs followed by 32 pulses
C
/32), and a logic 1 that consists of an unmodulated time of
Figure
Doc ID 022208 Rev 5
453.12µs
37.
Figure
113.28µs
56.64µs
35.
18.88µs
Figure
36.
ai12079
37.76µs
151.04µs
M24LR04E-R
ai12078
ai12080

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