MK21DN512VMC5 Freescale Semiconductor, MK21DN512VMC5 Datasheet - Page 32

• Manufacturer Part Number: MK21DN512VMC5
• Description: ARM Microcontrollers - MCU ARM+512Kb+USB+DryIce
• Manufacturer: Freescale Semiconductor

Specifications of MK21DN512VMC5

• Core: ARM Cortex M4
• Processor Series: MK21DN512
• Data Bus Width: 16 bit/32 bit
• Maximum Clock Frequency: 50 MHz
• Program Memory Size: 512 KB
• Data Ram Size: 64 KB
• On-chip Adc: Yes
• Operating Supply Voltage: 1.71 V to 3.6 V
• Operating Temperature Range: - 40 C to + 105 C
• Package / Case: MAPBGA-121
• Mounting Style: SMD/SMT
• A/d Bit Size: 16 bit
• Interface Type: Serial
• Length: 8 mm
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 40 C
• Number Of Timers: 2
• On-chip Dac: Yes
• Program Memory Type: Flash
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 1.71 V

Peripheral operating requirements and behaviors
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ °C influenced by the cycling
6.4.2 EzPort Switching Specifications
32
n
n
t
n
n
t
t
nvmretee100
t
nvmwree128
nvmwree512
nvmretd10k
nvmretee10
n
n
Symbol
nvmwree16
nvmretd1k
nvmwree4k
nvmcycp
nvmcycd
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and
typical values assume all byte-writes to FlexRAM.
EP1a
Num
EP1
EP2
EP3
EP4
EP5
EP6
EP7
EP8
EP9
Cycling endurance
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Cycling endurance
Data retention up to 100% of write endurance
Data retention up to 10% of write endurance
Write endurance
Description
Operating voltage
EZP_CK frequency of operation (all commands except
READ)
EZP_CK frequency of operation (READ command)
EZP_CS negation to next EZP_CS assertion
EZP_CS input valid to EZP_CK high (setup)
EZP_CK high to EZP_CS input invalid (hold)
EZP_D input valid to EZP_CK high (setup)
EZP_CK high to EZP_D input invalid (hold)
EZP_CK low to EZP_Q output valid
EZP_CK low to EZP_Q output invalid (hold)
EZP_CS negation to EZP_Q tri-state
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
Description
Table 22. NVM reliability specifications (continued)
K21 Sub-Family Data Sheet Data Sheet, Rev. 3, 08/2012.
Table 23. EzPort switching specifications
FlexRAM as EEPROM
Data Flash
1.27 M
315 K
10 M
10 K
10 K
35 K
Min.
20
20
5
5
175 K
1.6 M
6.4 M
Typ.
50 M
j
50 K
50 K
100
100
≤ °C.
50
50
2 x t
1
1.71
Min.
—
—
EZP_CK
—
—
5
5
2
5
0
Max.
—
—
—
—
—
—
—
—
—
—
Freescale Semiconductor, Inc.
f
f
Max.
SYS
SYS
3.6
12
—
—
—
—
—
—
/2
/8
cycles
cycles
writes
writes
writes
writes
years
years
years
years
Unit
MHz
MHz
Unit
Notes
ns
ns
ns
ns
ns
ns
ns
ns
V
2
2
3