MK21DN512VMC5 Freescale Semiconductor, MK21DN512VMC5 Datasheet - Page 31

• Manufacturer Part Number: MK21DN512VMC5
• Description: ARM Microcontrollers - MCU ARM+512Kb+USB+DryIce
• Manufacturer: Freescale Semiconductor

Specifications of MK21DN512VMC5

• Core: ARM Cortex M4
• Processor Series: MK21DN512
• Data Bus Width: 16 bit/32 bit
• Maximum Clock Frequency: 50 MHz
• Program Memory Size: 512 KB
• Data Ram Size: 64 KB
• On-chip Adc: Yes
• Operating Supply Voltage: 1.71 V to 3.6 V
• Operating Temperature Range: - 40 C to + 105 C
• Package / Case: MAPBGA-121
• Mounting Style: SMD/SMT
• A/d Bit Size: 16 bit
• Interface Type: Serial
• Length: 8 mm
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 40 C
• Number Of Timers: 2
• On-chip Dac: Yes
• Program Memory Type: Flash
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 1.71 V

1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash high voltage current behaviors
6.4.1.4 Reliability specifications
Freescale Semiconductor, Inc.
t
t
t
t
t
t
t
t
eewr16b128k
t
eewr32b128k
t
t
t
eewr8b128k
eewr16b32k
eewr16b64k
eewr32b32k
eewr32b64k
t
eewr16bers
eewr32bers
nvmretp10k
Symbol
eewr8b32k
eewr8b64k
Symbol
nvmretp1k
I
Symbol
I
DD_PGM
DD_ERS
Byte-write to FlexRAM execution time:
Word-write to erased FlexRAM location
execution time
Word-write to FlexRAM execution time:
Longword-write to erased FlexRAM location
execution time
Longword-write to FlexRAM execution time:
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Description
Description
Average current adder during high voltage
flash programming operation
Average current adder during high voltage
flash erase operation
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
Description
Table 20. Flash command timing specifications (continued)
Table 21. Flash high voltage current behaviors
K21 Sub-Family Data Sheet Data Sheet, Rev. 3, 08/2012.
Table 22. NVM reliability specifications
Longword-write to FlexRAM for EEPROM operation
Word-write to FlexRAM for EEPROM operation
Table continues on the next page...
Program Flash
Min.
Min.
20
—
—
—
—
—
—
—
—
—
—
5
Min.
—
—
Peripheral operating requirements and behaviors
1200
Typ.
Typ.
385
475
650
175
385
475
650
360
630
810
100
50
1
Typ.
2.5
1.5
1800
2000
2400
1800
2000
2400
2050
2250
2675
Max.
Max.
260
540
—
—
Max.
6.0
4.0
years
years
Unit
Unit
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
Unit
mA
mA
Notes
Notes
31