CEB65A3 CET [Chino-Excel Technology], CEB65A3 Datasheet - Page 2

• Manufacturer Part Number: CEB65A3
• Description: N-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: CET [Chino-Excel Technology]

Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Parameter
b
c
c
b
T c = 25 C unless otherwise noted
Symbol
R
V
BV
t
t
V
C
C
I
C
Q
I
GS(th)
DS(on)
d(on)
d(off)
Q
I
GSSF
Q
GSSR
I
DSS
t
t
SD
oss
iss
rss
S
r
gd
f
gs
DSS
g
CEP65A3/CEB65A3
2
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
GS
DS
DD
GS
DS
GS
GS
Test Condition
= 0V, I
= 25V, V
= 20V, V
= -20V, V
= V
= 10V, I
= 4.5V, I
= 15V, V
= 15V, I
= 4.5V R
= 15V, I
= 10V
= 0V, I
DS
, I
D
S
D
D
D
D
= 250 µ A
D
= 30A
GS
GS
DS
GEN
DS
=35A,
= 250 µ A
= 35A
= 35A,
= 24A
= 0V,
= 0V
= 0V
= 0V
= 16
Min
25
1
14.7
Typ
921
209
108
2.5
3.1
14
20
50
18
9
6
-100
Max
100
100
2.5
1.2
12
18
40
10
35
20
45
1
Units
m
m
µ A
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
V
4