K9F1G08Q0M-PIB0 SAMSUNG [Samsung semiconductor], K9F1G08Q0M-PIB0 Datasheet - Page 38

• Manufacturer Part Number: K9F1G08Q0M-PIB0
• Description: 1Gb Gb 1.8V NAND Flash Errata
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at V
cuit gets ready for any command sequences as shown in Figure 17. The two step command sequence for program/erase provides
additional software protection.
Figure 17. AC Waveforms for Power Transition
WP
WE
V
CC
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
IL
during power-up and power-down. A recovery time of minimum 10 s is required before internal cir-
10 s
High
37
FLASH MEMORY
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
SAMSUNG