K9F1G08Q0M-PIB0 SAMSUNG [Samsung semiconductor], K9F1G08Q0M-PIB0 Datasheet - Page 28

• Manufacturer Part Number: K9F1G08Q0M-PIB0
• Description: 1Gb Gb 1.8V NAND Flash Errata
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
90 ID : Access command = 90H
ID Defintition Table
Read ID Operation
CLE
CE
WE
ALE
RE
I/Ox
1
2
3
4
st
nd
rd
th
Byte
Byte
Byte
Byte
Read ID Command
90h
Description
Maker Code
Device Code
Don’ t care
Page Size, Block Size, Spare Size, Organization,Serial access minimum
Address. 1cycle
K9F1G08Q0M
K9F1G16Q0M
K9F1G08U0M
K9F1G16U0M
00h
Device
t
REA
t
AR
Maker Code Device Code
Device Code*(2nd Cycle)
27
ECh
A1h
F1h
B1h
C1h
Device
Code*
XXh
FLASH MEMORY
4th Cycle*
15h
15h
55h
55h
4th cyc.*
SAMSUNG