K9F1G08Q0M-PIB0 SAMSUNG [Samsung semiconductor], K9F1G08Q0M-PIB0 Datasheet - Page 33
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K9F1G08Q0M-PIB0
Manufacturer Part Number
K9F1G08Q0M-PIB0
Description
1Gb Gb 1.8V NAND Flash Errata
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K9F1G08Q0M-PIB0.pdf
(38 pages)
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
NOTE : Since programming the last page does not employ caching, the program time has to be that of Page Program. However, if
the previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after com-
pletion of the previous cycle, which can be expressed as the following formula.
Figure 12. Page Copy-Back program Operation with Random Data Input
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
Copy-Back Program
The copy-back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an external memory.
Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The ben-
efit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned
free block. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copy-
ing-program with the address of destination page. A read operation with "35h" command and the address of the source page moves
the whole 2112byte(X8 device) or 1056word(X16 device) data into the internal data buffer. As soon as the device returns to Ready
state, Page-Copy Data-input command (85h) with the address cycles of destination page followed may be written. The Program
Confirm command (10h) is required to actually begin the programming operation. Data input cycle for modifying a portion or multiple
distant portions of the source page is allowed as shown in Figure 12. "When there is a program-failure at Copy-Back operation,
error is reported by pass/fail status. But, if Copy-Back operations are accumulated over time, bit error due to charge loss is
not checked by external error detection/correction scheme. For this reason, two bit error correction is recommended for
the use of Copy-Back operation."
Figure 11. Page Copy-Back program Operation
R/B
I/Ox
R/B
I/Ox
tPROG= Program time for the last page+ Program time for the ( last -1 )th page
00h
00h
Col. Add1,2 & Row Add1,2
Col. Add1,2 & Row Add1,2
Source Address
Add.(4Cycles)
Source Address
Add.(4Cycles)
- (Program command cycle time + Last page data loading time)
35h
35h
t
t
R
R
85h
85h
Col. Add1,2 & Row Add1,2
Col. Add1,2 & Row Add1,2
Destination Address
Add.(4Cycles)
Destination Address
Add.(4Cycles)
32
Data
There is no limitation for the number of repetition.
10h
85h
t
PROG
Col Add1,2
Add.(2Cycles)
FLASH MEMORY
70h
Data
SAMSUNG
10h
I/O
Fail
0
t
PROG
70h
Pass