K9F1G08Q0M-PIB0 SAMSUNG [Samsung semiconductor], K9F1G08Q0M-PIB0 Datasheet - Page 36
![no-image](/images/no-image-200.jpg)
K9F1G08Q0M-PIB0
Manufacturer Part Number
K9F1G08Q0M-PIB0
Description
1Gb Gb 1.8V NAND Flash Errata
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K9F1G08Q0M-PIB0.pdf
(38 pages)
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K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activation of auto-
page read function. Auto-page read function is enabled only when PRE pin is tied to V
without latency. Power-On Auto Read mode is available only on 3.3V device(K9F1GXXU0M).
Figure 15. Power-On Auto-Read (3.3V device only)
V
CLE
CE
WE
ALE
PRE
R/B
RE
I/O
CC
X
~ 1.8V
t
R
35
cc.
Serial access may be done after power-on
1st
FLASH MEMORY
2nd
3rd
SAMSUNG
....
n th
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