K9F1G08Q0M-PIB0 SAMSUNG [Samsung semiconductor], K9F1G08Q0M-PIB0 Datasheet - Page 13

• Manufacturer Part Number: K9F1G08Q0M-PIB0
• Description: 1Gb Gb 1.8V NAND Flash Errata
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
AC Timing Characteristics for Command / Address / Data Input
AC Characteristics for Operation
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
NOTE :
NOTE :
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Parameter
Parameter
Symbol
t
t
t
t
t
t
t
CLH
t
t
t
t
CLS
ALS
ALH
WP
WC
WH
CS
CH
DS
DH
12
Symbol
t
t
t
t
t
t
t
t
t
t
WHR
t
t
t
t
REA
CEA
RHZ
CHZ
REH
CLR
RST
t
WB
t
AR
RR
RP
RC
OH
IR
R
25
Min
10
10
10
20
10
45
15
0
0
0
(1)
Min
10
10
20
25
50
15
15
60
0
-
-
-
-
-
-
-
FLASH MEMORY
Max
5/10/500
-
-
-
-
-
-
-
-
-
-
-
Max
100
25
30
45
30
20
-
-
-
-
-
-
-
-
-
(1)
SAMSUNG
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s