K9F1G08Q0M-PIB0 SAMSUNG [Samsung semiconductor], K9F1G08Q0M-PIB0 Datasheet - Page 16

• Manufacturer Part Number: K9F1G08Q0M-PIB0
• Description: 1Gb Gb 1.8V NAND Flash Errata
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
Erase Flow Chart
NAND Flash Technical Notes (Continued)
*
* Step1
When an error happens in the nth page of the Block ’ A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’ A’ in the buffer memory to the nth page of another free block. (Block ’ B’ )
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’ B’ .
* Step4
Do not further erase Block ’ A’ by creating an ’ invalid Block’ table or other appropriate scheme.
Block Replacement
Erase Error
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
1st
(n-1)th
nth
(page)
1st
(n-1)th
nth
(page)
No
an error occurs.
Read Status Register
Write Block Address
Erase Completed
Block A
Block B
or R/B = 1 ?
I/O 0 = 0 ?
I/O 6 = 1 ?
Write D0h
Write 60h
Start
Yes
Yes
2
Buffer memory of the controller.
1
No
15
Reclaim the Error
Read Flow Chart
No
Page Read Completed
FLASH MEMORY
ECC Generation
Write Address
Verify ECC
Read Data
Write 00h
Write 30h
Start
Yes
SAMSUNG