CEG8304 CET [Chino-Excel Technology], CEG8304 Datasheet - Page 2

• Manufacturer Part Number: CEG8304
• Description: Dual P-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: CET [Chino-Excel Technology]

Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Parameter
c
d
d
b
c
T
A
= 25 C unless otherwise noted
R
Symbol
V
BV
t
t
C
V
C
Q
I
GS(th)
DS(on)
C
d(on)
d(off)
Q
I
g
I
GSSF
Q
GSSR
I
t
DSS
t
SD
oss
iss
FS
rss
gd
S
r
f
gs
g
DSS
2
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
Test Condition
= 0V, I
= -30V, V
= 20V, V
= -20V, V
= V
= -10V, I
= -4.5V, I
= -15V, I
= -15V, V
= -15V, I
= -10V, R
= -15V, I
= -10V
= 0V, I
DS
, I
D
S
D
= -250 µ A
= -3.6A
D
D
D
D
D
DS
GS
DS
GS
GEN
= -250 µ A
= -3.6A
= -3.6A,
= -3.6A
= -1A,
= -2.8A
= 0V
= 0V
= 0V
= 0V,
= 6Ω
Min
-30
-1
CEG8304
Typ
550
3.3
1.8
48
64
90
60
12
22
10
8
3
4
Max
-100
-3.6
-1.3
100
58
85
24
44
13
-1
-3
6
8
Units
mΩ
mΩ
nA
nA
nC
nC
nC
µ A
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V